Raman study of self-assembled SiGe nanoislands grown at low temperatures

M. Ya Valakh; V. O. Yukhymchuk; V. M. Dzhagan; O. S. Lytvyn; A. G. Milekhin; A. I. Nikiforov; O. P. Pchelyakov; F. Alsina; J. Pascual

doi:10.1088/0957-4484/16/9/007

Raman study of self-assembled SiGe nanoislands grown at low temperatures

M. Ya Valakh, V. O. Yukhymchuk, V. M. Dzhagan, O. S. Lytvyn, A. G. Milekhin, A. I. Nikiforov, O. P. Pchelyakov, F. Alsina, J. Pascual

Departament de Física

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We report on Raman scattering measurements on Si-capped Ge quantum structures grown by molecular beam epitaxy on Si(001) at low temperatures. We find a double band structure in the Ge-Ge frequency range for nanoislands grown at substrate temperatures ranging in the interval 300-500 °C. Complementary information has been obtained from performing Raman scattering experiments on annealed samples. The results are interpreted in terms of a model that considers quantum structures (hut clusters) composed of a strained Ge core and a more relaxed SiGe shell. © 2005 IOP Publishing Ltd.

Idioma original	Anglès
Pàgines (de-a)	1464-1468
Revista	Nanotechnology
Volum	16
DOIs	https://doi.org/10.1088/0957-4484/16/9/007
Estat de la publicació	Publicada - 1 de set. 2005

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10.1088/0957-4484/16/9/007

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@article{1d983e43ac774a38bf687bde1e85e5c2,

title = "Raman study of self-assembled SiGe nanoislands grown at low temperatures",

abstract = "We report on Raman scattering measurements on Si-capped Ge quantum structures grown by molecular beam epitaxy on Si(001) at low temperatures. We find a double band structure in the Ge-Ge frequency range for nanoislands grown at substrate temperatures ranging in the interval 300-500 °C. Complementary information has been obtained from performing Raman scattering experiments on annealed samples. The results are interpreted in terms of a model that considers quantum structures (hut clusters) composed of a strained Ge core and a more relaxed SiGe shell. {\textcopyright} 2005 IOP Publishing Ltd.",

author = "Valakh, {M. Ya} and Yukhymchuk, {V. O.} and Dzhagan, {V. M.} and Lytvyn, {O. S.} and Milekhin, {A. G.} and Nikiforov, {A. I.} and Pchelyakov, {O. P.} and F. Alsina and J. Pascual",

year = "2005",

month = sep,

day = "1",

doi = "10.1088/0957-4484/16/9/007",

language = "English",

volume = "16",

pages = "1464--1468",

journal = "Nanotechnology",

issn = "0957-4484",

}

TY - JOUR

T1 - Raman study of self-assembled SiGe nanoislands grown at low temperatures

AU - Valakh, M. Ya

AU - Yukhymchuk, V. O.

AU - Dzhagan, V. M.

AU - Lytvyn, O. S.

AU - Milekhin, A. G.

AU - Nikiforov, A. I.

AU - Pchelyakov, O. P.

AU - Alsina, F.

AU - Pascual, J.

PY - 2005/9/1

Y1 - 2005/9/1

N2 - We report on Raman scattering measurements on Si-capped Ge quantum structures grown by molecular beam epitaxy on Si(001) at low temperatures. We find a double band structure in the Ge-Ge frequency range for nanoislands grown at substrate temperatures ranging in the interval 300-500 °C. Complementary information has been obtained from performing Raman scattering experiments on annealed samples. The results are interpreted in terms of a model that considers quantum structures (hut clusters) composed of a strained Ge core and a more relaxed SiGe shell. © 2005 IOP Publishing Ltd.

AB - We report on Raman scattering measurements on Si-capped Ge quantum structures grown by molecular beam epitaxy on Si(001) at low temperatures. We find a double band structure in the Ge-Ge frequency range for nanoislands grown at substrate temperatures ranging in the interval 300-500 °C. Complementary information has been obtained from performing Raman scattering experiments on annealed samples. The results are interpreted in terms of a model that considers quantum structures (hut clusters) composed of a strained Ge core and a more relaxed SiGe shell. © 2005 IOP Publishing Ltd.

U2 - 10.1088/0957-4484/16/9/007

DO - 10.1088/0957-4484/16/9/007

M3 - Article

SN - 0957-4484

VL - 16

SP - 1464

EP - 1468

JO - Nanotechnology

JF - Nanotechnology

ER -

Raman study of self-assembled SiGe nanoislands grown at low temperatures

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