Proc. of the IEEE International Reliability Physics Symposium (IRPS). "Switching Behavior of the Soft Breakdown Conduction Characteristic in Ultrathin (<5nm) Oxide MOS Capacitors".: IEEE International Reliability Physics Symposium (IRPS).

E. MIranda; R. Rodríguez; M. Nafría; J. Suñé; X. Aymerich

Proc. of the IEEE International Reliability Physics Symposium (IRPS). "Switching Behavior of the Soft Breakdown Conduction Characteristic in Ultrathin (<5nm) Oxide MOS Capacitors". IEEE International Reliability Physics Symposium (IRPS).

E. MIranda, R. Rodríguez, M. Nafría, J. Suñé, X. Aymerich

Departament d'Enginyeria Electrònica

Producció científica: LLibre/informe › Llibre d'Actes › Recerca

Idioma original	Anglès
Lloc de publicació	Reno (US)
Nombre de pàgines	5
Estat de la publicació	Publicada - de juny 1998

Com citar-ho

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title = "Proc. of the IEEE International Reliability Physics Symposium (IRPS). {"}Switching Behavior of the Soft Breakdown Conduction Characteristic in Ultrathin (<5nm) Oxide MOS Capacitors{"}.: IEEE International Reliability Physics Symposium (IRPS).",

author = "E. MIranda and R. Rodr{\'i}guez and M. Nafr{\'i}a and J. Su{\~n}{\'e} and X. Aymerich",

year = "1998",

month = jun,

language = "English",

}

Proc. of the IEEE International Reliability Physics Symposium (IRPS). "Switching Behavior of the Soft Breakdown Conduction Characteristic in Ultrathin (<5nm) Oxide MOS Capacitors". IEEE International Reliability Physics Symposium (IRPS). / MIranda, E.; Rodríguez, R.; Nafría, M. et al.
Reno (US), 1998. 5 pàg.

Producció científica: LLibre/informe › Llibre d'Actes › Recerca

TY - BOOK

T1 - Proc. of the IEEE International Reliability Physics Symposium (IRPS). "Switching Behavior of the Soft Breakdown Conduction Characteristic in Ultrathin (<5nm) Oxide MOS Capacitors".

T2 - IEEE International Reliability Physics Symposium (IRPS).

AU - MIranda, E.

AU - Rodríguez, R.

AU - Nafría, M.

AU - Suñé, J.

AU - Aymerich, X.

PY - 1998/6

Y1 - 1998/6

M3 - Proceeding

BT - Proc. of the IEEE International Reliability Physics Symposium (IRPS). "Switching Behavior of the Soft Breakdown Conduction Characteristic in Ultrathin (<5nm) Oxide MOS Capacitors".

CY - Reno (US)

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