Pre-Breakdown noise in electrically stressed thin SiO2 layers of MOS devices observed with C-AFM.

M. Porti, S. Meli, Montserrat Nafria Maqueda, Francisco Javier Aymerich Humet

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Idioma original	Anglès
Pàgines (de-a)	1203-1209
Revista	Microelectronics and Reliability
Volum	43
Número	8
DOIs	https://doi.org/10.1016/S0026-2714(03)00173-2
Estat de la publicació	Publicada - 1 de gen. 2003

Accés al document

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title = "Pre-Breakdown noise in electrically stressed thin SiO2 layers of MOS devices observed with C-AFM.",

author = "M. Porti and S. Meli and \{Nafria Maqueda\}, Montserrat and \{Aymerich Humet\}, \{Francisco Javier\}",

year = "2003",

month = jan,

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doi = "10.1016/S0026-2714(03)00173-2",

language = "English",

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T1 - Pre-Breakdown noise in electrically stressed thin SiO2 layers of MOS devices observed with C-AFM.

AU - Porti, M.

AU - Meli, S.

AU - Nafria Maqueda, Montserrat

AU - Aymerich Humet, Francisco Javier

PY - 2003/1/1

Y1 - 2003/1/1

UR - https://www.scopus.com/pages/publications/0043166548

U2 - 10.1016/S0026-2714(03)00173-2

DO - 10.1016/S0026-2714(03)00173-2

M3 - Article

SN - 0026-2714

VL - 43

SP - 1203

EP - 1209

JO - Microelectronics and Reliability

JF - Microelectronics and Reliability

IS - 8

ER -