TY - JOUR
T1 - Power-efficient noise-induced reduction of reram cell's temporal variability effects
AU - Ntinas, Vasileios
AU - Rubio, Antonio
AU - Sirakoulis, Georgios Ch
AU - Aguilera, Emili Salvador
AU - Pedro, Marta
AU - Crespo-Yepes, Albert
AU - Martin-Martinez, Javier
AU - Rodriguez, Rosana
AU - Nafria, Montserrat
N1 - Publisher Copyright:
© 2004-2012 IEEE.
DBLP License: DBLP's bibliographic metadata records provided through http://dblp.org/ are distributed under a Creative Commons CC0 1.0 Universal Public Domain Dedication. Although the bibliographic metadata records are provided consistent with CC0 1.0 Dedication, the content described by the metadata records is not. Content may be subject to copyright, rights of privacy, rights of publicity and other restrictions.
PY - 2021/4/1
Y1 - 2021/4/1
N2 - Resistive Random Access Memory (ReRAM) is a promising novel memory technology for non-volatile storing, with low-power operation and ultra-high area density. However, ReRAM memories still face issues through commercialization, mainly owing to the fact that the high fabrication variations and the stochastic switching of the manufactured ReRAM devices cause high Bit Error Rate (BER). Given that ReRAM devices are nonlinear elements, the nonlinear phenomenon of Stochastic Resonance (SR), which defines that an input disturbance with specific characteristics can improve the total performance of the nonlinear system, is used to reduce the ReRAM cell's BER. Thus, in this brief, the BER of a single ReRAM cell is explored, using the Stanford PKU model, and is improved after the application of specific additive input noise. The power dissipation of the proposed approach is also evaluated and compared with the consideration of higher amplitude writing pulses in the lack of noise, showing that the proposed noise-induced technique can decrease the BER without the excessive increase of the power dissipation. As a first step, towards the experimental verification of the proposed method, noise-induced measurements on a single fabricated ReRAM device are also performed. Overall, the presented results of the BER reduction with low power dissipation, reaching up to 3.26x less power consumption considering 100 ns writing pulses, are encouraging for ReRAM designers, delivering a circuit-level solution against the device-level problem.
AB - Resistive Random Access Memory (ReRAM) is a promising novel memory technology for non-volatile storing, with low-power operation and ultra-high area density. However, ReRAM memories still face issues through commercialization, mainly owing to the fact that the high fabrication variations and the stochastic switching of the manufactured ReRAM devices cause high Bit Error Rate (BER). Given that ReRAM devices are nonlinear elements, the nonlinear phenomenon of Stochastic Resonance (SR), which defines that an input disturbance with specific characteristics can improve the total performance of the nonlinear system, is used to reduce the ReRAM cell's BER. Thus, in this brief, the BER of a single ReRAM cell is explored, using the Stanford PKU model, and is improved after the application of specific additive input noise. The power dissipation of the proposed approach is also evaluated and compared with the consideration of higher amplitude writing pulses in the lack of noise, showing that the proposed noise-induced technique can decrease the BER without the excessive increase of the power dissipation. As a first step, towards the experimental verification of the proposed method, noise-induced measurements on a single fabricated ReRAM device are also performed. Overall, the presented results of the BER reduction with low power dissipation, reaching up to 3.26x less power consumption considering 100 ns writing pulses, are encouraging for ReRAM designers, delivering a circuit-level solution against the device-level problem.
KW - Additive noise
KW - Benchmark testing
KW - Bit error rate
KW - Emerging memories
KW - Memristor
KW - Performance evaluation
KW - ReRAM devices
KW - Resistance
KW - Stochastic resonance
KW - Switches
KW - Variability
KW - Writing
KW - emerging memories
KW - memristor
KW - stochastic resonance
KW - variability
UR - http://www.scopus.com/inward/record.url?scp=85100377739&partnerID=8YFLogxK
UR - https://www.mendeley.com/catalogue/9083e916-da88-3f98-bb28-0c830d5ed038/
M3 - Article
AN - SCOPUS:85100377739
SN - 1549-7747
VL - 68
SP - 1378
EP - 1382
JO - IEEE Transactions on Circuits and Systems II: Express Briefs
JF - IEEE Transactions on Circuits and Systems II: Express Briefs
IS - 4
M1 - 4
ER -