Postbreakdown Conduction in Ultrathin La2 O3 Gate Dielectrics

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Idioma original	Anglès
Pàgines (de-a)	333-339
Revista	IEEE Transactions on Device and Materials Reliability
Volum	7
Número	2
DOIs	https://doi.org/10.1109/TDMR.2007.901056
Estat de la publicació	Publicada - 1 de gen. 2007

Accés al document

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title = "Postbreakdown Conduction in Ultrathin La2 O3 Gate Dielectrics",

author = "E. Miranda and H. Iwai",

year = "2007",

month = jan,

day = "1",

doi = "10.1109/TDMR.2007.901056",

language = "English",

volume = "7",

pages = "333--339",

journal = "IEEE Transactions on Device and Materials Reliability",

issn = "1530-4388",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

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T1 - Postbreakdown Conduction in Ultrathin La2 O3 Gate Dielectrics

AU - Miranda, E.

AU - Iwai, H.

PY - 2007/1/1

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UR - https://www.scopus.com/pages/publications/34548305011

U2 - 10.1109/TDMR.2007.901056

DO - 10.1109/TDMR.2007.901056

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JO - IEEE Transactions on Device and Materials Reliability

JF - IEEE Transactions on Device and Materials Reliability

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