Post-breakdown current in MOS structures: extraction of parameters using the Integral difference function method

E. Miranda, A. Ortiz-Conde, F. García-Sánchez, E. Farkas-Sosa

Producció científica: Contribució a revista › Article › Recerca

2 Cites (Scopus)

Idioma original	Anglès
Pàgines (de-a)	190-196
Revista	IEEE Transactions on Device and Materials Reliability
Volum	6
Número	2
DOIs	https://doi.org/10.1109/TDMR.2006.876563
Estat de la publicació	Publicada - 1 de gen. 2006

Accés al document

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