pH‐ISFET with NMOS technology

S. Alegret; J. Bartrolí; C. Jiménez; M. del Valle; C. Domínguez; E. Cabruja; A. Merlos

doi:10.1002/elan.1140030418

pH‐ISFET with NMOS technology

S. Alegret, J. Bartrolí, C. Jiménez, M. del Valle, C. Domínguez, E. Cabruja, A. Merlos

Departament de Química

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Resum

The construction of a pH‐ISFET (ion‐selective field effect transistor) fabricated with standard negative‐channel MOS technology, compatible with complementary MOS technology, and using silicon nitride as a pH‐sensitive material, is described. Its main analytical characteristics are discussed. The resulting calibration plot is linear over the pH range from 2 to 11; with a slope of 54 mV per pH unit. Copyright © 1991 VCH Publishers, Inc.

Idioma original	Anglès
Pàgines (de-a)	355-360
Revista	Electroanalysis
Volum	3
Número	4-5
DOIs	https://doi.org/10.1002/elan.1140030418
Estat de la publicació	Publicada - 1 de gen. 1991

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10.1002/elan.1140030418

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https://www.scopus.com/pages/publications/84987592489

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@article{d87f64c8525045eb906723b544fccc98,

title = "pH‐ISFET with NMOS technology",

abstract = "The construction of a pH‐ISFET (ion‐selective field effect transistor) fabricated with standard negative‐channel MOS technology, compatible with complementary MOS technology, and using silicon nitride as a pH‐sensitive material, is described. Its main analytical characteristics are discussed. The resulting calibration plot is linear over the pH range from 2 to 11; with a slope of 54 mV per pH unit. Copyright {\textcopyright} 1991 VCH Publishers, Inc.",

author = "S. Alegret and J. Bartrol{\'i} and C. Jim{\'e}nez and \{del Valle\}, M. and C. Dom{\'i}nguez and E. Cabruja and A. Merlos",

year = "1991",

month = jan,

day = "1",

doi = "10.1002/elan.1140030418",

language = "English",

volume = "3",

pages = "355--360",

journal = "Electroanalysis",

issn = "1040-0397",

publisher = "Wiley-VCH Verlag",

number = "4-5",

}

TY - JOUR

T1 - pH‐ISFET with NMOS technology

AU - Alegret, S.

AU - Bartrolí, J.

AU - Jiménez, C.

AU - del Valle, M.

AU - Domínguez, C.

AU - Cabruja, E.

AU - Merlos, A.

PY - 1991/1/1

Y1 - 1991/1/1

N2 - The construction of a pH‐ISFET (ion‐selective field effect transistor) fabricated with standard negative‐channel MOS technology, compatible with complementary MOS technology, and using silicon nitride as a pH‐sensitive material, is described. Its main analytical characteristics are discussed. The resulting calibration plot is linear over the pH range from 2 to 11; with a slope of 54 mV per pH unit. Copyright © 1991 VCH Publishers, Inc.

AB - The construction of a pH‐ISFET (ion‐selective field effect transistor) fabricated with standard negative‐channel MOS technology, compatible with complementary MOS technology, and using silicon nitride as a pH‐sensitive material, is described. Its main analytical characteristics are discussed. The resulting calibration plot is linear over the pH range from 2 to 11; with a slope of 54 mV per pH unit. Copyright © 1991 VCH Publishers, Inc.

UR - https://www.scopus.com/pages/publications/84987592489

U2 - 10.1002/elan.1140030418

DO - 10.1002/elan.1140030418

M3 - Article

SN - 1040-0397

VL - 3

SP - 355

EP - 360

JO - Electroanalysis

JF - Electroanalysis

IS - 4-5

ER -

pH‐ISFET with NMOS technology

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