TY - JOUR
T1 - Performance of CMOS pixel sensor prototypes in ams H35 and aH18 technology for the ATLAS ITk upgrade
AU - Kiehn, Moritz
AU - Di Bello, Francesco Armando
AU - Benoit, Mathieu
AU - Casanova Mohr, Raimon
AU - Chen, Hucheng
AU - Chen, Kai
AU - D.M.S., Sultan
AU - Ehrler, Felix
AU - Ferrere, Didier
AU - Frizell, Dylan
AU - Gonzalez Sevilla, Sergio
AU - Iacobucci, Giuseppe
AU - Lanni, Francesco
AU - Liu, Hongbin
AU - Merlassino, Claudia
AU - Metcalfe, Jessica
AU - Miucci, Antonio
AU - Peric, Ivan
AU - Prathapan, Mridula
AU - Schimassek, Rudolf
AU - Vicente Barreto, Mateus
AU - Weston, Thomas
AU - Vilella Figueras, Eva
AU - Weber, Michele
AU - Weber, Alena
AU - Wong, Winnie
AU - Wu, Weihao
AU - Zaffaroni, Ettore
AU - Zhang, Hui
AU - Zhang, Matt
N1 - Publisher Copyright:
© 2018 Elsevier B.V.
PY - 2019/4/21
Y1 - 2019/4/21
N2 - Pixel sensors based on commercial high-voltage CMOS processes are an exciting technology that is considered as an option for the outer layer of the ATLAS inner tracker upgrade at the High Luminosity LHC. Here, charged particles are detected using deep n-wells as sensor diodes with the depleted region extending into the silicon bulk. Both analog and digital readout electronics can be added to achieve different levels of integration up to a fully monolithic sensor. Small scale prototypes using the ams CMOS technology have previously demonstrated that it can achieve the required radiation tolerance of 1015neq/cm2 and detection efficiencies above 99.5%. Recently, large area prototypes, comparable in size to a full sensor, have been produced that include most features required towards a final design: the H35demo prototype produced in ams H35 technology that supports both external and integrated readout and the monolithic ATLASPix1 pre-production design produced in ams aH18 technology. Both chips are based on large fill-factor pixel designs, but differ in readout structure. Performance results for H35DEMO with capacitively-coupled external readout and first results for the monolithic ATLASPix1 are shown.
AB - Pixel sensors based on commercial high-voltage CMOS processes are an exciting technology that is considered as an option for the outer layer of the ATLAS inner tracker upgrade at the High Luminosity LHC. Here, charged particles are detected using deep n-wells as sensor diodes with the depleted region extending into the silicon bulk. Both analog and digital readout electronics can be added to achieve different levels of integration up to a fully monolithic sensor. Small scale prototypes using the ams CMOS technology have previously demonstrated that it can achieve the required radiation tolerance of 1015neq/cm2 and detection efficiencies above 99.5%. Recently, large area prototypes, comparable in size to a full sensor, have been produced that include most features required towards a final design: the H35demo prototype produced in ams H35 technology that supports both external and integrated readout and the monolithic ATLASPix1 pre-production design produced in ams aH18 technology. Both chips are based on large fill-factor pixel designs, but differ in readout structure. Performance results for H35DEMO with capacitively-coupled external readout and first results for the monolithic ATLASPix1 are shown.
KW - ATLAS ITk upgrade
KW - CMOS
KW - High luminosity LHC
KW - HV-MAPS
KW - Monolithic active pixel sensor
KW - Silicon pixel sensor
UR - http://www.scopus.com/inward/record.url?scp=85052735435&partnerID=8YFLogxK
U2 - 10.1016/j.nima.2018.07.061
DO - 10.1016/j.nima.2018.07.061
M3 - Article
AN - SCOPUS:85052735435
SN - 0168-9002
VL - 924
SP - 104
EP - 107
JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
ER -