Performance and power consumption trade-off in UTBB FDSOI inverters operated at NTV for IoT applications

Carlos Couso; Javier Martin-Martinez; Marc Porti; Montserrat Nafría

doi:10.1109/JEDS.2017.2768658

Performance and power consumption trade-off in UTBB FDSOI inverters operated at NTV for IoT applications

Carlos Couso, Javier Martin-Martinez, Marc Porti, Montserrat Nafría

Departament d'Enginyeria Electrònica

Producció científica: Contribució a revista › Article › Recerca › Avaluat per experts

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© 2017 IEEE. Power consumption and I on /I off ratio of an ultra-thin body and buried oxide fully depleted silicon on insulator CMOS inverter circuit has been calculated at near-threshold voltage operation from TCAD simulations. TCAD outputs (current, voltage, and capacitance) were used as parameters to solve the inverter circuit. Besides, a bias operation point (V OP ) has been proposed, which provides a good trade-off between the I on /I off ratio and the energy consumption. Variations of this operation point, due to the presence of interface traps, have been also analyzed.

Idioma original	Anglès
Pàgines (de-a)	55-62
Revista	IEEE Journal of the Electron Devices Society
Volum	6
Número	1
DOIs	https://doi.org/10.1109/JEDS.2017.2768658
Estat de la publicació	Publicada - 1 de gen. 2018

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title = "Performance and power consumption trade-off in UTBB FDSOI inverters operated at NTV for IoT applications",

abstract = "{\textcopyright} 2017 IEEE. Power consumption and I on /I off ratio of an ultra-thin body and buried oxide fully depleted silicon on insulator CMOS inverter circuit has been calculated at near-threshold voltage operation from TCAD simulations. TCAD outputs (current, voltage, and capacitance) were used as parameters to solve the inverter circuit. Besides, a bias operation point (V OP ) has been proposed, which provides a good trade-off between the I on /I off ratio and the energy consumption. Variations of this operation point, due to the presence of interface traps, have been also analyzed.",

keywords = "CMOS inverter, IoT, Near-threshold voltage, Power consumption, TCAD, UTBB FDSOI",

author = "Carlos Couso and Javier Martin-Martinez and Marc Porti and Montserrat Nafr{\'i}a",

year = "2018",

month = jan,

day = "1",

doi = "10.1109/JEDS.2017.2768658",

language = "English",

volume = "6",

pages = "55--62",

journal = "IEEE Journal of the Electron Devices Society",

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T1 - Performance and power consumption trade-off in UTBB FDSOI inverters operated at NTV for IoT applications

AU - Couso, Carlos

AU - Martin-Martinez, Javier

AU - Porti, Marc

AU - Nafría, Montserrat

PY - 2018/1/1

Y1 - 2018/1/1

N2 - © 2017 IEEE. Power consumption and I on /I off ratio of an ultra-thin body and buried oxide fully depleted silicon on insulator CMOS inverter circuit has been calculated at near-threshold voltage operation from TCAD simulations. TCAD outputs (current, voltage, and capacitance) were used as parameters to solve the inverter circuit. Besides, a bias operation point (V OP ) has been proposed, which provides a good trade-off between the I on /I off ratio and the energy consumption. Variations of this operation point, due to the presence of interface traps, have been also analyzed.

AB - © 2017 IEEE. Power consumption and I on /I off ratio of an ultra-thin body and buried oxide fully depleted silicon on insulator CMOS inverter circuit has been calculated at near-threshold voltage operation from TCAD simulations. TCAD outputs (current, voltage, and capacitance) were used as parameters to solve the inverter circuit. Besides, a bias operation point (V OP ) has been proposed, which provides a good trade-off between the I on /I off ratio and the energy consumption. Variations of this operation point, due to the presence of interface traps, have been also analyzed.

KW - CMOS inverter

KW - IoT

KW - Near-threshold voltage

KW - Power consumption

KW - TCAD

KW - UTBB FDSOI

U2 - 10.1109/JEDS.2017.2768658

DO - 10.1109/JEDS.2017.2768658

M3 - Article

SN - 2168-6734

VL - 6

SP - 55

EP - 62

JO - IEEE Journal of the Electron Devices Society

JF - IEEE Journal of the Electron Devices Society

IS - 1

ER -

Performance and power consumption trade-off in UTBB FDSOI inverters operated at NTV for IoT applications

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