Performance and power consumption trade-off in UTBB FDSOI inverters operated at NTV for IoT applications

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Resum

© 2017 IEEE. Power consumption and I on /I off ratio of an ultra-thin body and buried oxide fully depleted silicon on insulator CMOS inverter circuit has been calculated at near-threshold voltage operation from TCAD simulations. TCAD outputs (current, voltage, and capacitance) were used as parameters to solve the inverter circuit. Besides, a bias operation point (V OP ) has been proposed, which provides a good trade-off between the I on /I off ratio and the energy consumption. Variations of this operation point, due to the presence of interface traps, have been also analyzed.
Idioma originalEnglish
Pàgines (de-a)55-62
RevistaIEEE Journal of the Electron Devices Society
Volum6
Número1
DOIs
Estat de la publicacióPublicada - 1 de gen. 2018

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