TY - JOUR
T1 - Oxide thickness determination in CrSiO2Si structures by dc current-voltage pairs
AU - Aymerich-Humet, X.
AU - Campabadal, F.
AU - Serra-Mestres, F.
PY - 1987/1/1
Y1 - 1987/1/1
N2 - A recently proposed method for obtaining the oxide thickness based in current-voltage pairs in the Fowler-Nordheim regime is analysed in the CrSiO2Si(p) structures with oxide thickness in the range 50-60 Å. After measuring the capacitance-voltage, and current-voltage characteristics, the Fowler-Nordheim plot is obtained, yielding the CrSiO2 barrier height. Then, applying an iterative technique the oxide thickness is obtained for each I-V pair. The results show that in spite of the oscillatory structure exhibited in the Fowler-Nordheim regime the accuracy in the oxide thickness obtained in this way is much greater than in other electrical methods. © 1987.
AB - A recently proposed method for obtaining the oxide thickness based in current-voltage pairs in the Fowler-Nordheim regime is analysed in the CrSiO2Si(p) structures with oxide thickness in the range 50-60 Å. After measuring the capacitance-voltage, and current-voltage characteristics, the Fowler-Nordheim plot is obtained, yielding the CrSiO2 barrier height. Then, applying an iterative technique the oxide thickness is obtained for each I-V pair. The results show that in spite of the oscillatory structure exhibited in the Fowler-Nordheim regime the accuracy in the oxide thickness obtained in this way is much greater than in other electrical methods. © 1987.
UR - https://www.scopus.com/pages/publications/0022278234
U2 - 10.1016/0042-207X(87)90321-6
DO - 10.1016/0042-207X(87)90321-6
M3 - Article
SN - 0042-207X
VL - 37
SP - 403
EP - 405
JO - Vacuum
JF - Vacuum
ER -