Oxide conductivity increase during the progressive-breakdown of SiO2 gate oxides observed with C-AFM

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Idioma original	Anglès
Pàgines (de-a)	1501-1505
Revista	Microelectronics and Reliability
Volum	43
Número	9-11
DOIs	https://doi.org/10.1016/S0026-2714(03)00266-X
Estat de la publicació	Publicada - 1 de gen. 2003

Accés al document

@article{8d948b1dfab245bdbbd026240f11d972,

title = "Oxide conductivity increase during the progressive-breakdown of SiO2 gate oxides observed with C-AFM",

author = "M. Porti and M. Nafr{\'i}a and X. Aymerich",

year = "2003",

month = jan,

day = "1",

doi = "10.1016/S0026-2714(03)00266-X",

language = "English",

volume = "43",

pages = "1501--1505",

journal = "Microelectronics and Reliability",

issn = "0026-2714",

publisher = "Elsevier Limited",

number = "9-11",

}

TY - JOUR

T1 - Oxide conductivity increase during the progressive-breakdown of SiO2 gate oxides observed with C-AFM

AU - Porti, M.

AU - Nafría, M.

AU - Aymerich, X.

PY - 2003/1/1

Y1 - 2003/1/1

U2 - 10.1016/S0026-2714(03)00266-X

DO - 10.1016/S0026-2714(03)00266-X

M3 - Article

SN - 0026-2714

VL - 43

SP - 1501

EP - 1505

JO - Microelectronics and Reliability

JF - Microelectronics and Reliability

IS - 9-11

ER -