Optical determination of growth variants in ordered GaInP

F. Alsina; M. Garriga; M. I. Alonso; S. Tortosa; J. Pascual; C. Geng; F. Scholz; R. W. Glew

doi:10.1016/S0038-1098(96)00652-7

Optical determination of growth variants in ordered GaInP

F. Alsina, M. Garriga, M. I. Alonso, S. Tortosa, J. Pascual, C. Geng, F. Scholz, R. W. Glew

Departament de Física

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Measurements on the dependence of the ellipsometric parameters as a function of azimuthal angle allow the determination of the dielectric tensor including its orientation with respect to the sample surface. This is done in ordered GaInP at the fixed energy of 3.3 eV where the anisotropy manifests at largest. In such material this method allows to discriminate between the presence of singly or doubly ordered variants and, in the former case, allows to establish which one of the two subvariants ([1̄11] or [11̄1]) is grown. © 1997 Elsevier Science Ltd. All rights reserved.

Idioma original	Anglès
Pàgines (de-a)	757-760
Revista	Solid State Communications
Volum	101
DOIs	https://doi.org/10.1016/S0038-1098(96)00652-7
Estat de la publicació	Publicada - 1 de gen. 1997

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@article{6c857543ddb544a786b7528334ae7cd1,

title = "Optical determination of growth variants in ordered GaInP",

abstract = "Measurements on the dependence of the ellipsometric parameters as a function of azimuthal angle allow the determination of the dielectric tensor including its orientation with respect to the sample surface. This is done in ordered GaInP at the fixed energy of 3.3 eV where the anisotropy manifests at largest. In such material this method allows to discriminate between the presence of singly or doubly ordered variants and, in the former case, allows to establish which one of the two subvariants ([{\=1}11] or [1{\=1}1]) is grown. {\textcopyright} 1997 Elsevier Science Ltd. All rights reserved.",

keywords = "A. semiconductors, D. optical properties, D. order-disorder effects",

author = "F. Alsina and M. Garriga and Alonso, \{M. I.\} and S. Tortosa and J. Pascual and C. Geng and F. Scholz and Glew, \{R. W.\}",

year = "1997",

month = jan,

day = "1",

doi = "10.1016/S0038-1098(96)00652-7",

language = "English",

volume = "101",

pages = "757--760",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Optical determination of growth variants in ordered GaInP

AU - Alsina, F.

AU - Garriga, M.

AU - Alonso, M. I.

AU - Tortosa, S.

AU - Pascual, J.

AU - Geng, C.

AU - Scholz, F.

AU - Glew, R. W.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - Measurements on the dependence of the ellipsometric parameters as a function of azimuthal angle allow the determination of the dielectric tensor including its orientation with respect to the sample surface. This is done in ordered GaInP at the fixed energy of 3.3 eV where the anisotropy manifests at largest. In such material this method allows to discriminate between the presence of singly or doubly ordered variants and, in the former case, allows to establish which one of the two subvariants ([1̄11] or [11̄1]) is grown. © 1997 Elsevier Science Ltd. All rights reserved.

AB - Measurements on the dependence of the ellipsometric parameters as a function of azimuthal angle allow the determination of the dielectric tensor including its orientation with respect to the sample surface. This is done in ordered GaInP at the fixed energy of 3.3 eV where the anisotropy manifests at largest. In such material this method allows to discriminate between the presence of singly or doubly ordered variants and, in the former case, allows to establish which one of the two subvariants ([1̄11] or [11̄1]) is grown. © 1997 Elsevier Science Ltd. All rights reserved.

KW - A. semiconductors

KW - D. optical properties

KW - D. order-disorder effects

UR - https://www.scopus.com/pages/publications/0031098901

U2 - 10.1016/S0038-1098(96)00652-7

DO - 10.1016/S0038-1098(96)00652-7

M3 - Article

SN - 0038-1098

VL - 101

SP - 757

EP - 760

JO - Solid State Communications

JF - Solid State Communications

ER -

Optical determination of growth variants in ordered GaInP

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