On the SiO\sub x\nosub Transition Layer in abrupt Si-SiO\sub 2 \nosub Chemical Interface in MOS Structures

J. Suñé; I. Placencia; N. Barniol; X. and Aymerich

On the SiO\sub x\nosub Transition Layer in abrupt Si-SiO\sub 2 \nosub Chemical Interface in MOS Structures

J. Suñé, I. Placencia, N. Barniol, X. and Aymerich

Departament de Física

Producció científica: Contribució a revista › Article › Recerca

Idioma original	Anglès
Pàgines (de-a)	463-472
Revista	Surface Science
Volum	0
Número	208
Estat de la publicació	Publicada - 1 de gen. 1989

Altres arxius i enllaços

https://www.scopus.com/pages/publications/0000874883

Com citar-ho

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title = "On the SiO\textbackslash{}sub x\textbackslash{}nosub Transition Layer in abrupt Si-SiO\textbackslash{}sub 2 \textbackslash{}nosub Chemical Interface in MOS Structures",

author = "J. Su{\~n}{\'e} and I. Placencia and N. Barniol and \{and Aymerich\}, X.",

year = "1989",

month = jan,

day = "1",

language = "English",

volume = "0",

pages = "463--472",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier",

number = "208",

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T1 - On the SiO\sub x\nosub Transition Layer in abrupt Si-SiO\sub 2 \nosub Chemical Interface in MOS Structures

AU - Suñé, J.

AU - Placencia, I.

AU - Barniol, N.

AU - and Aymerich, X.

PY - 1989/1/1

Y1 - 1989/1/1

UR - https://www.scopus.com/pages/publications/0000874883

M3 - Article

SN - 0039-6028

VL - 0

SP - 463

EP - 472

JO - Surface Science

JF - Surface Science

IS - 208

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