Nondestructive multiple breakdown events in very thin SiO<inf>2</inf> films

J. Suñé; E. Farrés; I. Placencia; N. Barniol; F. Martín; X. Aymerich

doi:10.1063/1.102396

Nondestructive multiple breakdown events in very thin SiO<inf>2</inf> films

J. Suñé, E. Farrés, I. Placencia, N. Barniol, F. Martín, X. Aymerich

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Resum

Several breakdown events and multilevel current fluctuations have been observed when ultrathin SiO2 films are subjected to constant-voltage stresses. These breakdown events are sometimes reversible, and consist in a local change of conduction mechanism. This reversibility shows that no catastrophic thermal effects occur, and that the breakdown is only a local switching between two oxide conduction states of very different conductivities.

Idioma original	Anglès
Pàgines (de-a)	128-130
Revista	Applied physics letters
Volum	55
DOIs	https://doi.org/10.1063/1.102396
Estat de la publicació	Publicada - 1 de des. 1989

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10.1063/1.102396

https://ddd.uab.cat/record/116308

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title = "Nondestructive multiple breakdown events in very thin SiO2 films",

abstract = "Several breakdown events and multilevel current fluctuations have been observed when ultrathin SiO2 films are subjected to constant-voltage stresses. These breakdown events are sometimes reversible, and consist in a local change of conduction mechanism. This reversibility shows that no catastrophic thermal effects occur, and that the breakdown is only a local switching between two oxide conduction states of very different conductivities.",

author = "J. Su{\~n}{\'e} and E. Farr{\'e}s and I. Placencia and N. Barniol and F. Mart{\'i}n and X. Aymerich",

year = "1989",

month = dec,

day = "1",

doi = "10.1063/1.102396",

language = "English",

volume = "55",

pages = "128--130",

journal = "Applied physics letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Nondestructive multiple breakdown events in very thin SiO2 films

AU - Suñé, J.

AU - Farrés, E.

AU - Placencia, I.

AU - Barniol, N.

AU - Martín, F.

AU - Aymerich, X.

PY - 1989/12/1

Y1 - 1989/12/1

N2 - Several breakdown events and multilevel current fluctuations have been observed when ultrathin SiO2 films are subjected to constant-voltage stresses. These breakdown events are sometimes reversible, and consist in a local change of conduction mechanism. This reversibility shows that no catastrophic thermal effects occur, and that the breakdown is only a local switching between two oxide conduction states of very different conductivities.

AB - Several breakdown events and multilevel current fluctuations have been observed when ultrathin SiO2 films are subjected to constant-voltage stresses. These breakdown events are sometimes reversible, and consist in a local change of conduction mechanism. This reversibility shows that no catastrophic thermal effects occur, and that the breakdown is only a local switching between two oxide conduction states of very different conductivities.

UR - https://www.scopus.com/pages/publications/0042026376

U2 - 10.1063/1.102396

DO - 10.1063/1.102396

M3 - Article

SN - 0003-6951

VL - 55

SP - 128

EP - 130

JO - Applied physics letters

JF - Applied physics letters

ER -

Nondestructive multiple breakdown events in very thin SiO<inf>2</inf> films

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