Non-equilibrium gate tunneling current in ultra-thin (<2 nm) oxide MOS devices

Keyphrases

• Non-equilibrium 100%
• Ultrathin 100%
• Poisson Equation 100%
• Metal-oxide-semiconductor Structure 100%
• Gate Tunneling Current 100%
• Metal-oxide-semiconductor Devices 100%
• Oxide-metal-oxide 100%
• Quasi-equilibrium Approximation 100%
• Electrical Properties 50%
• Oxides 50%
• Oxide Thickness 50%
• Electronic States 50%
• Quantum Electronics 50%
• Tunneling 50%
• Thin Oxides 50%
• Schrödinger Equation 50%
• Occupancy 50%
• Applied Bias 50%
• Density Profile 50%
• Thick Oxide 50%
• Self-consistent Solution 50%
• Electron Scattering 50%
• Inelastic Scattering 50%
• Fermi-Dirac Distribution 50%
• Kinetic Treatment 50%
• Accumulation Layer 50%
• Schrödinger 50%
• Quasi-Fermi Levels 50%

Engineering

• Semiconductor Device 100%
• Tunnel Construction 100%
• Nonequilibrium 100%
• Metal Oxide Semiconductor 100%
• Anodes and Cathode 66%
• Semiconductor Structure 66%
• State Solution 33%
• Oxide Thickness 33%
• Density Change 33%
• Electronic State 33%
• Fermi Level 33%

Material Science

• Oxide Semiconductor 100%
• Metal Oxide 100%
• Semiconductor Device 100%
• Oxide Compound 100%
• Cathode 40%
• Semiconductor Structure 40%
• Anode 40%
• Density 20%