New insights on the post-BD conduction of MOS devices at the nanoscale

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Resum

We have combined standard electrical tests with conductive-atomic force microscopy experiments to investigate the conduction of MOS devices after the dielectric breakdown (BD) of the SiO2 gate oxide. In particular, the influence of the conduction nanometer scale parameters on the overall device post-BD current-voltage characteristics has been analyzed. The results show a nonuniform conductivity of the oxide at the BD area and that the total current flowing through the device is mainly driven by a very small fraction of that region. © 2005 IEEE.
Idioma originalEnglish
Pàgines (de-a)109-111
RevistaIEEE Electron Device Letters
Volum26
DOIs
Estat de la publicacióPublicada - 1 de febr. 2005

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