Neural network based analysis of random telegraph noise in resistive random access memories

G González-Cordero; M B González; Antoni Morell Pérez; F Jiménez-Molinos; F Campabadal; J B Roldán

Neural network based analysis of random telegraph noise in resistive random access memories

G González-Cordero, M B González, Antoni Morell Pérez, F Jiménez-Molinos, F Campabadal, J B Roldán

Departament de Telecomunicació i Enginyeria de Sistemes

Producció científica: Contribució a revista › Article › Recerca › Avaluat per experts

11 Cites (Scopus)

1 Descàrregues (Pure)

Idioma original	Anglès
Revista	Semiconductor science and technology
Estat de la publicació	Publicada - 1 de febr. 2020

Accés al document

https://ddd.uab.cat/record/273823

Com citar-ho

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title = "Neural network based analysis of random telegraph noise in resistive random access memories",

author = "G Gonz{\'a}lez-Cordero and Gonz{\'a}lez, {M B} and {Morell P{\'e}rez}, Antoni and F Jim{\'e}nez-Molinos and F Campabadal and Rold{\'a}n, {J B}",

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journal = "Semiconductor science and technology",

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T1 - Neural network based analysis of random telegraph noise in resistive random access memories

AU - González-Cordero, G

AU - González, M B

AU - Morell Pérez, Antoni

AU - Jiménez-Molinos, F

AU - Campabadal, F

AU - Roldán, J B

PY - 2020/2/1

Y1 - 2020/2/1

M3 - Article

SN - 0268-1242

JO - Semiconductor science and technology

JF - Semiconductor science and technology

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