TY - JOUR
T1 - Nanoscale post-breakdown conduction of HfO2/SiO2 MOS gate stacks studied by enhanced-CAFM
AU - Blasco, X.
AU - Nafría, Montse
AU - Aymerich, X.
AU - Pétry, J.
AU - Vandervorst, W.
PY - 2005/12/1
Y1 - 2005/12/1
N2 - An enhanced conductive atomic force microscope has enabled a measurement of the conduction through a HfO2/SiO2 gate stack until breakdown (BD) in a single measurement, with nanometer resolution. Before the stack BD, the current-voltage characteristic shows several conduction modes. After BD, switchings between different conduction states were observed, showing that BD is a reversible phenomenon. © 2005 IEEE.
AB - An enhanced conductive atomic force microscope has enabled a measurement of the conduction through a HfO2/SiO2 gate stack until breakdown (BD) in a single measurement, with nanometer resolution. Before the stack BD, the current-voltage characteristic shows several conduction modes. After BD, switchings between different conduction states were observed, showing that BD is a reversible phenomenon. © 2005 IEEE.
KW - Conductive atomic force microscopy (CAFM)
KW - Dielectric breakdown
KW - Gate dielectric
KW - HfO 2
KW - High-κ
KW - Reliability
KW - SiO 2
UR - https://www.scopus.com/pages/publications/29244462884
U2 - 10.1109/TED.2005.859705
DO - 10.1109/TED.2005.859705
M3 - Article
SN - 0018-9383
VL - 52
SP - 2817
EP - 2819
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
ER -