Nanometer scale lithography of silicon(100) surfaces using tapping mode atomic force microscopy

Si(100) surfaces have been successfully oxidized at nanometer scale using an atomic force microscope working in tapping mode (TMAFM). To modify the surface, gold coated tips and chromium-gold coated tips have been used in order to apply a positive voltage to the sample against the grounded tip. A silicon oxide line of ∼10 nm lateral dimensions can be routinely grown on Si(100) surfaces by TMAFM, at a tip velocity as high as 0.1 mm/s. Pattern dimensions have been measured for different tip velocities and applied voltages and a tip velocity of up to 10 mm/s has been predicted. The patterns have been successfully used as a lithographic mask for a wet chemical etching. © 1996 American Vacuum Society.