Nanometer-scale electrical characterization of stressed ultrathin SiO<inf>2</inf> films using conducting atomic force microscopy

M. Porti; M. Nafría; X. Aymerich; A. Olbrich; B. Ebersberger

doi:10.1063/1.1382624

Nanometer-scale electrical characterization of stressed ultrathin SiO<inf>2</inf> films using conducting atomic force microscopy

M. Porti, M. Nafría, X. Aymerich, A. Olbrich, B. Ebersberger

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A conductive atomic force microscope has been used to electrically stress and to investigate the effects of degradation in the conduction properties of ultrathin (<6 nm) SiO2 films on a nanometer scale (areas of ≈ 100 nm2). Before oxide breakdown, switching between two states of well-defined conductivity and sudden changes of conductivity were observed, which are attributed to the capture/ release of single charges in the defects generated during stress. © 2001 American Institute of Physics.

Idioma original	Anglès
Pàgines (de-a)	4181-4183
Revista	Applied physics letters
Volum	78
DOIs	https://doi.org/10.1063/1.1382624
Estat de la publicació	Publicada - 25 de juny 2001

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10.1063/1.1382624

https://ddd.uab.cat/record/116266

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title = "Nanometer-scale electrical characterization of stressed ultrathin SiO2 films using conducting atomic force microscopy",

abstract = "A conductive atomic force microscope has been used to electrically stress and to investigate the effects of degradation in the conduction properties of ultrathin (<6 nm) SiO2 films on a nanometer scale (areas of ≈ 100 nm2). Before oxide breakdown, switching between two states of well-defined conductivity and sudden changes of conductivity were observed, which are attributed to the capture/ release of single charges in the defects generated during stress. {\textcopyright} 2001 American Institute of Physics.",

author = "M. Porti and M. Nafr{\'i}a and X. Aymerich and A. Olbrich and B. Ebersberger",

year = "2001",

month = jun,

day = "25",

doi = "10.1063/1.1382624",

language = "English",

volume = "78",

pages = "4181--4183",

journal = "Applied physics letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Nanometer-scale electrical characterization of stressed ultrathin SiO2 films using conducting atomic force microscopy

AU - Porti, M.

AU - Nafría, M.

AU - Aymerich, X.

AU - Olbrich, A.

AU - Ebersberger, B.

PY - 2001/6/25

Y1 - 2001/6/25

N2 - A conductive atomic force microscope has been used to electrically stress and to investigate the effects of degradation in the conduction properties of ultrathin (<6 nm) SiO2 films on a nanometer scale (areas of ≈ 100 nm2). Before oxide breakdown, switching between two states of well-defined conductivity and sudden changes of conductivity were observed, which are attributed to the capture/ release of single charges in the defects generated during stress. © 2001 American Institute of Physics.

AB - A conductive atomic force microscope has been used to electrically stress and to investigate the effects of degradation in the conduction properties of ultrathin (<6 nm) SiO2 films on a nanometer scale (areas of ≈ 100 nm2). Before oxide breakdown, switching between two states of well-defined conductivity and sudden changes of conductivity were observed, which are attributed to the capture/ release of single charges in the defects generated during stress. © 2001 American Institute of Physics.

U2 - 10.1063/1.1382624

DO - 10.1063/1.1382624

M3 - Article

SN - 0003-6951

VL - 78

SP - 4181

EP - 4183

JO - Applied physics letters

JF - Applied physics letters

ER -

Nanometer-scale electrical characterization of stressed ultrathin SiO<inf>2</inf> films using conducting atomic force microscopy

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