INIS
architecture
100%
nanostructures
100%
magnetic semiconductors
100%
oxides
100%
cations
33%
oxygen
33%
temperature range 0273-0400 k
33%
doped materials
33%
silica
33%
vacancies
33%
implementation
16%
metals
16%
removal
16%
reduction
16%
conversion
16%
magnetic properties
16%
magnetization
16%
paramagnetism
16%
transition metals
16%
replicas
16%
x-ray diffraction
16%
powders
16%
nitrates
16%
iron ions
16%
manganese ions
16%
cobalt ions
16%
Material Science
Nanocasting
100%
Magnetic Semiconductor
100%
Oxide Compound
100%
Oxygen Vacancy
33%
Nanodevices
16%
Intelligent Material
16%
Diffraction Pattern
16%
Mesoporous Silica
16%
Diluted Magnetic Semiconductor
16%
Mesoporous Material
16%
Rietveld Refinement
16%
Transition Metal
16%
Powder
16%
X-Ray Diffraction
16%
Magnetic Property
16%
Silicon Dioxide
16%
Cobalt(II,III) Oxide
16%
Semiconductor Doping
16%
Keyphrases
CoFe
100%
Bixbyite
50%
Geometrical Arrangement
25%
Oxide Powder
25%
Silica Removal
25%
Hard Template
25%
Mesoporous Silica
25%
Heterovalent
25%
Isovalent
25%
Rietveld Refinement
25%
Oxide Ion
25%
Metal Nitrates
25%
Spintronic Nanodevice
25%