Multiscale modeling of Schottky-barrier MOSFETs with disilicide source/drain contacts: Role of contacts in the carrier injection

We report on a multiscale approach for the simulation of electrical characteristics of metal disilicide based Schottky-barrier metal oxide semiconductor field-effect transistors (SB-MOSFETs). Atomistic tight-binding method and nonequilibrium Green's function formalism are combined to calculate the propagation of charge carriers in the metal and the charge distribution at the M Si2 (111) Si (111) and M Si2 (111) Si (100) (with M=Ni, Co, and Fe) contacts. Quantum transmission coefficients at the interfaces are then computed accounting for energy and momentum conservation, and are further used as input parameters for a compact model of SB-MOSFET current-voltage simulations. In the quest for nanodevice performance optimization, this approach allows unveiling the role of different materials in configurations relevant for heterostructure nanowires. © 2007 The American Physical Society.