@inbook{7fb47c2366a34c889fb74059f46af76b,
title = "Modeling the post-breakdown current in MOS devices on p-silicon substrate",
abstract = "A model for the post-breakdown leakage current in MOS p-silicon devices with ultra thin oxides is presented. The model is based on a combination of two ideal diodes and two resistances. Model parameters are extracted using nonlinear optimization.",
keywords = "Metal-oxide-semiconductor, Oxide breakdown, Reliability",
author = "A. Ortiz-Conde and E. Miranda and {Garc{\'i}a Sanch{\'e}z}, {F. J.} and E. Farkas and S. Malobabic",
year = "2006",
doi = "10.1109/ICCDCS.2006.250828",
language = "English",
isbn = "1-4244-0041-4",
series = "Proceedings of the Sixth International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2006 - Final Program and Technical Digest",
pages = "13--16",
booktitle = "2006 International Caribbean Conference on Devices, Circuits and Systems",
}