Modeling the breakdown spots in silicon dioxide films as point contacts

Producció científica: Contribució a una revistaArticleRecercaAvaluat per experts

37 Cites (Scopus)


Experiments and simulations are combined to demonstrate that the hard dielectric breakdown of thin SiO2 films in polycrystaline silicon/oxide/semiconductor structures leads to the formation of conduction paths with atomic-size dimensions which behave as point contacts between the silicon electrodes. Depending on the area of the breakdown spots, the conduction properties of the breakdown paths are shown to be those of a classical Sharvin point contact or of a quantum point contact. © 1999 American Institute of Physics.
Idioma originalEnglish
Pàgines (de-a)959-961
RevistaApplied physics letters
Estat de la publicacióPublicada - 16 d’ag. 1999


Navegar pels temes de recerca de 'Modeling the breakdown spots in silicon dioxide films as point contacts'. Junts formen un fingerprint únic.

Com citar-ho