Modeling of the I-V and I-t characteristics of multiferroic BiFeO3 layers

E. Miranda, D. Jimenez, J. Blasco, J. Sune, A. Tsurumaki-Fukuchi, H. Yamada, A. Sawa

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We have investigated the current-voltage (I-V) and current-time (I-t) characteristics of Pt/BiFeO3/SrRuO3 structures fabricated on SrTiO3 substrates. The devices exhibit resistive switching effect under the application of a single and multiple voltage loops. The I-V curves are simulated using a Schottky-like conduction model with voltage-varying parameters. The model includes series resistance correction and barrier lowering effect. The I-t curves are fitted using a power-law model. It is found that the Schottky barrier height (SBH) modulation arising from the BiFeO3 polarization reversal is remarkably lower (<0.07 eV) than previously reported (>0.5 eV) and that the ON current decay for a constant applied voltage is low and characterized by very small power exponent (∼10-2). This indicates that the ON state is remarkably stable against electrical stress.

Idioma originalEnglish
Títol de la publicació2015 10th Spanish Conference on Electron Devices (CDE)
Nombre de pàgines3
ISBN (electrònic)978-1-4799-8108-3
Estat de la publicacióPublicada - 16 d’abr. 2015

Sèrie de publicacions

NomProceedings of the 2015 10th Spanish Conference on Electron Devices, CDE 2015


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