TY - BOOK
T1 - Modeling high-frequency noise behavior in a SiGe Heterojunction Bipolar Transistor for different bias
AU - Pacheco-Sanchez, Anibal
AU - Enciso-Aguilar, Mauro
AU - Rodriguez-Mendez, Luis
AU - Ramirez-Garcia, Eloy
PY - 2011/10/29
Y1 - 2011/10/29
N2 - In this paper, a study of the minimum noise figure of a given SiGe Heterojunction Bipolar Transistor (HBT) varying the bias point at different frequencies is implemented; the study includes a comparison between results obtained from computational simulation and analytical expression with measurements reported previously.
AB - In this paper, a study of the minimum noise figure of a given SiGe Heterojunction Bipolar Transistor (HBT) varying the bias point at different frequencies is implemented; the study includes a comparison between results obtained from computational simulation and analytical expression with measurements reported previously.
U2 - 10.1109/imoc.2011.6169331
DO - 10.1109/imoc.2011.6169331
M3 - Proceeding
BT - Modeling high-frequency noise behavior in a SiGe Heterojunction Bipolar Transistor for different bias
ER -