MOCVD Growth and Characterization of 3C-SiC on Si(100)

J. Rodríguez; M.T. Clavaguera-Mora; N. Clavaguera; G. Arnaud; J. Camassel; J. Pascual; C. Domínguez; S. Berberich; J. Millán

MOCVD Growth and Characterization of 3C-SiC on Si(100)

J. Rodríguez, M.T. Clavaguera-Mora, N. Clavaguera, G. Arnaud, J. Camassel, J. Pascual, C. Domínguez, S. Berberich, J. Millán

Departament de Física

Producció científica: Contribució a revista › Article › Recerca › Avaluat per experts

Idioma original	Anglès
Pàgines (de-a)	251-266
Revista	Advances in Science and Technology
Número	6
Estat de la publicació	Publicada - 1 de gen. 1995

Com citar-ho

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title = "MOCVD Growth and Characterization of 3C-SiC on Si(100)",

author = "J. Rodr{\'i}guez and M.T. Clavaguera-Mora and N. Clavaguera and G. Arnaud and J. Camassel and J. Pascual and C. Dom{\'i}nguez and S. Berberich and J. Mill{\'a}n",

year = "1995",

month = jan,

day = "1",

language = "English",

pages = "251--266",

journal = "Advances in Science and Technology",

issn = "1662-0356",

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T1 - MOCVD Growth and Characterization of 3C-SiC on Si(100)

AU - Rodríguez, J.

AU - Clavaguera-Mora, M.T.

AU - Clavaguera, N.

AU - Arnaud, G.

AU - Camassel, J.

AU - Pascual, J.

AU - Domínguez, C.

AU - Berberich, S.

AU - Millán, J.

PY - 1995/1/1

Y1 - 1995/1/1

M3 - Article

SN - 1662-0356

SP - 251

EP - 266

JO - Advances in Science and Technology

JF - Advances in Science and Technology

IS - 6

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