TY - BOOK
T1 - MIS structures with interfacial graphene for ReRAM applications
T2 - A nanoscale and device level characterization
AU - Claramunt, S.
AU - Ruiz, A.
AU - Wu, Q.
AU - Porti, M.
AU - Nafria, M.
AU - Aymerich, X.
N1 - Publisher Copyright:
© 2020 IEEE.
PY - 2020/9/1
Y1 - 2020/9/1
N2 - In this work, the electrical properties of Metal-Insulator-Semiconductor devices with graphene intercalated between the HfO2 dielectric and the gate electrode were studied at the nanometer scale (with a Conductive Atomic Force Microscope) and at device level. Their feasibility as ReRAM devices was also evaluated. At device level, when graphene is used as an interfacial layer, several resistive switching cycles were observed, meanwhile the standard structures without graphene did not show resistive switching behavior. Nanoscale analysis have shown that graphene avoids the complete microstructural damage of the oxide material during the forming process, demonstrating the protective role of the intercalated graphene layer in ReRAM structures.
AB - In this work, the electrical properties of Metal-Insulator-Semiconductor devices with graphene intercalated between the HfO2 dielectric and the gate electrode were studied at the nanometer scale (with a Conductive Atomic Force Microscope) and at device level. Their feasibility as ReRAM devices was also evaluated. At device level, when graphene is used as an interfacial layer, several resistive switching cycles were observed, meanwhile the standard structures without graphene did not show resistive switching behavior. Nanoscale analysis have shown that graphene avoids the complete microstructural damage of the oxide material during the forming process, demonstrating the protective role of the intercalated graphene layer in ReRAM structures.
KW - CAFM
KW - graphene
KW - non-volatile memory
KW - ReRAM
UR - http://www.scopus.com/inward/record.url?scp=85102968097&partnerID=8YFLogxK
U2 - 10.1109/EUROSOI-ULIS49407.2020.9365299
DO - 10.1109/EUROSOI-ULIS49407.2020.9365299
M3 - Proceeding
AN - SCOPUS:85102968097
T3 - 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020
BT - MIS structures with interfacial graphene for ReRAM applications
ER -