Measurement of mobility and lifetime of electrons and holes in a Schottky CdTe diode

Gerard Ariño-Estrada, Mokhtar Chmeissani, Gianluca De Lorenzo, Machiel Kolstein, Carles Puigdengoles, J. García, Enric Cabruja i Casas

    Producció científica: Contribució a revistaArticleRecercaAvaluat per experts

    25 Cites (Scopus)

    Resum

    We report on the measurement of drift properties of electrons and holes in a CdTe diode grown by the travelling heating method (THM). Mobility and lifetime of both charge carriers has been measured independently at room temperature and fixed bias voltage using charge integration readout electronics. Both electrode sides of the detector have been exposed to a 241 Am source in order to obtain events with full contributions of either electrons or holes. The drift time has been measured to obtain the mobility for each charge carrier. The Hecht equation has been employed to evaluate the lifetime. The measured values for μτ (mobility-lifetime product) are in agreement with earlier published data.
    Idioma originalAnglès
    RevistaJournal of Instrumentation
    Volum9
    DOIs
    Estat de la publicacióPublicada - 2014

    Fingerprint

    Navegar pels temes de recerca de 'Measurement of mobility and lifetime of electrons and holes in a Schottky CdTe diode'. Junts formen un fingerprint únic.

    Com citar-ho