Magnetically induced field effect in carbon nanotube devices

Georgy Fedorov, Alexander Tselev, David Jiménez, Sylvain Latil, Nikolai G. Kalugin, Paola Barbara, Dmitry Smirnov, Stephan Roche

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Resum

Three-terminal devices with conduction channels formed by quasi-metallic carbon nanotubes (CNTs) are shown to operate as nanotube-based field-effect transistors under strong magnetic fields. The off-state conductance of the devices varies exponentially with the magnetic flux intensity. We extract the quasi-metallic CNT chirality as well as the characteristics of the Schottky barriers formed at the metal-nanotube contacts from the temperature-dependent magnetoconductance measurements. © 2007 American Chemical Society.
Idioma originalAnglès
Pàgines (de-a)960-964
RevistaNano Letters
Volum7
DOIs
Estat de la publicacióPublicada - 1 d’abr. 2007

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