@book{101e320c6d7f420c9a6a1387b2a3030f,
title = "Lumped model-based analysis of hBN RF switches",
abstract = "The intrinsic and extrinsic impedance parameters, the return loss, insertion loss and isolation of RF two-dimensional switches fabricated with hexagonal boron nitride (hBN) are described here by a lumped equivalent circuit model. Straight-forward analytical expressions are obtained. In contrast to conventional switches, the unique RF performance of the hBN switch, at ON-state i.e., a direct improvement with frequency of the insertion loss, is accurately described by considering a capacitor in the intrinsic part of the model. The latter is suggested to be related to storaged charge during the resistive switching mechanism.",
keywords = "2D, hBN, insertion loss, isolation, resistive switching, RF switch",
author = "Omar Jordan-Garcia and Eloy Ramirez-Garcia and David Jimenez and Anibal Pacheco-Sanchez",
note = "Funding Information: This work has received funding from the European Union{\textquoteright}s Horizon 2020 research and innovation programme under grant agreements No GrapheneCore3 881603, from Ministerio de Ciencia, Innovaci{\'o}n y Univer-sidades under grant agreement RTI2018-097876-B-C21(MCIU/AEI/FEDER, UE) and FJC2020-046213-I. This article has been partially funded by the European Union Regional Development Fund within the framework of the ERDF Operational Program of Catalonia 2014-2020 with the support of the Department de Recerca i Universitat, with a grant of 50% of total cost eligible. GraphCAT project reference: 001-P-001702. Publisher Copyright: {\textcopyright} 2022 IEEE.",
year = "2022",
month = jul,
day = "4",
doi = "10.1109/LAEDC54796.2022.9907772",
language = "English",
series = "2022 IEEE Latin America Electron Devices Conference, LAEDC 2022",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
address = "United States",
}