Lumped model-based analysis of hBN RF switches

Omar Jordan-Garcia, Eloy Ramirez-Garcia, David Jimenez, Anibal Pacheco-Sanchez

Producció científica: Llibre/InformeLlibre d'ActesRecercaAvaluat per experts

1 Citació (Scopus)


The intrinsic and extrinsic impedance parameters, the return loss, insertion loss and isolation of RF two-dimensional switches fabricated with hexagonal boron nitride (hBN) are described here by a lumped equivalent circuit model. Straight-forward analytical expressions are obtained. In contrast to conventional switches, the unique RF performance of the hBN switch, at ON-state i.e., a direct improvement with frequency of the insertion loss, is accurately described by considering a capacitor in the intrinsic part of the model. The latter is suggested to be related to storaged charge during the resistive switching mechanism.

Idioma originalEnglish
EditorInstitute of Electrical and Electronics Engineers Inc.
ISBN (electrònic)9781665497671
Estat de la publicacióPublicada - 4 de jul. 2022

Sèrie de publicacions

Nom2022 IEEE Latin America Electron Devices Conference, LAEDC 2022


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