TY - JOUR
T1 - Long-wavelength phonons in TlSbS2. II. Raman-active modes under hydrostatic pressure
AU - Rouquette, P.
AU - Gil, B.
AU - Camassel, J.
AU - Pascual, J.
PY - 1989/1/1
Y1 - 1989/1/1
N2 - We report the evolution of the first-order Raman modes of the layered semiconductor TlSbS2 with hydrostatic pressure applied up to 10 kbar. All the modes experience a blue shift, except the mode at 286 cm-1, whose insensitivity to pressure shows it to be governed by stretching of Sb-S diatomic chains in the layer. An axially symmetric short-range potential between nearest neighbors has been constructed to account for the full Raman spectrum. © 1989 The American Physical Society.
AB - We report the evolution of the first-order Raman modes of the layered semiconductor TlSbS2 with hydrostatic pressure applied up to 10 kbar. All the modes experience a blue shift, except the mode at 286 cm-1, whose insensitivity to pressure shows it to be governed by stretching of Sb-S diatomic chains in the layer. An axially symmetric short-range potential between nearest neighbors has been constructed to account for the full Raman spectrum. © 1989 The American Physical Society.
UR - https://www.scopus.com/pages/publications/35949011568
U2 - 10.1103/PhysRevB.39.1837
DO - 10.1103/PhysRevB.39.1837
M3 - Article
SN - 0163-1829
VL - 39
SP - 1837
EP - 1843
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
IS - 3
ER -