Logistic modeling of progressive breakdown in ultrathin gate oxides

E. Miranda; L. Bandiera; A. Cester; A. Paccagnella

doi:10.1109/ESSDERC.2003.1256816

Logistic modeling of progressive breakdown in ultrathin gate oxides

E. Miranda^*, L. Bandiera, A. Cester, A. Paccagnella

^*Autor corresponent d’aquest treball

Departament d'Enginyeria Electrònica

Producció científica: Contribució a revista › Article › Recerca › Avaluat per experts

2 Cites (Scopus)

Resum

The sigmoidal behavior exhibited by the current-time characteristics of constant voltage stressed MOS capacitors with ultrathin oxides is ascribed to a self-constrained increase of the leakage sites population that assist the conduction process between the electrodes. To analytically describe this dynamical process we consider a classical model of population growth theories such as the Verhulst differential equation. The role played by the background tunneling current in the detection of the breakdown event is also discussed.

Idioma original	Anglès
Pàgines (de-a)	83-86
Nombre de pàgines	4
Revista	European Solid-State Device Research Conference
DOIs	https://doi.org/10.1109/ESSDERC.2003.1256816
Estat de la publicació	Publicada - 2003

Accés al document

10.1109/ESSDERC.2003.1256816

Altres arxius i enllaços

Enllaç a la publicació de Scopus

Com citar-ho

@article{708eee5747a541b0b87042e0b70c3bf0,

title = "Logistic modeling of progressive breakdown in ultrathin gate oxides",

abstract = "The sigmoidal behavior exhibited by the current-time characteristics of constant voltage stressed MOS capacitors with ultrathin oxides is ascribed to a self-constrained increase of the leakage sites population that assist the conduction process between the electrodes. To analytically describe this dynamical process we consider a classical model of population growth theories such as the Verhulst differential equation. The role played by the background tunneling current in the detection of the breakdown event is also discussed.",

author = "E. Miranda and L. Bandiera and A. Cester and A. Paccagnella",

note = "Publisher Copyright: {\textcopyright} 2003 IEEE.",

year = "2003",

doi = "10.1109/ESSDERC.2003.1256816",

language = "English",

pages = "83--86",

}

TY - JOUR

T1 - Logistic modeling of progressive breakdown in ultrathin gate oxides

AU - Miranda, E.

AU - Bandiera, L.

AU - Cester, A.

AU - Paccagnella, A.

PY - 2003

Y1 - 2003

N2 - The sigmoidal behavior exhibited by the current-time characteristics of constant voltage stressed MOS capacitors with ultrathin oxides is ascribed to a self-constrained increase of the leakage sites population that assist the conduction process between the electrodes. To analytically describe this dynamical process we consider a classical model of population growth theories such as the Verhulst differential equation. The role played by the background tunneling current in the detection of the breakdown event is also discussed.

AB - The sigmoidal behavior exhibited by the current-time characteristics of constant voltage stressed MOS capacitors with ultrathin oxides is ascribed to a self-constrained increase of the leakage sites population that assist the conduction process between the electrodes. To analytically describe this dynamical process we consider a classical model of population growth theories such as the Verhulst differential equation. The role played by the background tunneling current in the detection of the breakdown event is also discussed.

UR - http://www.scopus.com/inward/record.url?scp=84907686747&partnerID=8YFLogxK

U2 - 10.1109/ESSDERC.2003.1256816

DO - 10.1109/ESSDERC.2003.1256816

M3 - Article

AN - SCOPUS:84907686747

SN - 1930-8876

SP - 83

EP - 86

JO - European Solid-State Device Research Conference

JF - European Solid-State Device Research Conference

ER -

Logistic modeling of progressive breakdown in ultrathin gate oxides

Resum

Accés al document

Altres arxius i enllaços

Fingerprint

Com citar-ho