Limitations of the spreading resistance technique for ion implant profile measurements

J. Montserrat; J. Bausells; LORA TAMAYO E.

doi:10.1016/0168-583X(91)96174-J

Limitations of the spreading resistance technique for ion implant profile measurements

J. Montserrat, J. Bausells, LORA TAMAYO E.

Departament de Física

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The main problem with the spreading resistance technique is that it yields a net carrier concentration profile measured on a beveled sample and this may be quite different from the corresponding dopant profile due to carrier spilling. We have made theoretical and experimental studies of this phenomenon to evaluate the accuracy of the technique to measure ion-implanted profiles. We see that errors are important when a pn shallow junction is formed with low implant doses. © 1991.

Títol traduït de la contribució	Limitations of the spreading resistance technique for ion implant profile measurements
Idioma original	Múltiples idiomes
Pàgines (de-a)	261-265
Revista	Nuclear Inst. and Methods in Physics Research, B
Volum	55
Número	1-4
DOIs	https://doi.org/10.1016/0168-583X(91)96174-J
Estat de la publicació	Publicada - 2 d’abr. 1991

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10.1016/0168-583X(91)96174-J

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title = "Limitations of the spreading resistance technique for ion implant profile measurements",

abstract = "The main problem with the spreading resistance technique is that it yields a net carrier concentration profile measured on a beveled sample and this may be quite different from the corresponding dopant profile due to carrier spilling. We have made theoretical and experimental studies of this phenomenon to evaluate the accuracy of the technique to measure ion-implanted profiles. We see that errors are important when a pn shallow junction is formed with low implant doses. {\textcopyright} 1991.",

author = "J. Montserrat and J. Bausells and E., \{LORA TAMAYO\}",

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doi = "10.1016/0168-583X(91)96174-J",

language = "M{\'u}ltiples idiomas",

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T1 - Limitations of the spreading resistance technique for ion implant profile measurements

AU - Montserrat, J.

AU - Bausells, J.

AU - E., LORA TAMAYO

PY - 1991/4/2

Y1 - 1991/4/2

N2 - The main problem with the spreading resistance technique is that it yields a net carrier concentration profile measured on a beveled sample and this may be quite different from the corresponding dopant profile due to carrier spilling. We have made theoretical and experimental studies of this phenomenon to evaluate the accuracy of the technique to measure ion-implanted profiles. We see that errors are important when a pn shallow junction is formed with low implant doses. © 1991.

AB - The main problem with the spreading resistance technique is that it yields a net carrier concentration profile measured on a beveled sample and this may be quite different from the corresponding dopant profile due to carrier spilling. We have made theoretical and experimental studies of this phenomenon to evaluate the accuracy of the technique to measure ion-implanted profiles. We see that errors are important when a pn shallow junction is formed with low implant doses. © 1991.

UR - https://www.scopus.com/pages/publications/44949272378

U2 - 10.1016/0168-583X(91)96174-J

DO - 10.1016/0168-583X(91)96174-J

M3 - Artículo

SN - 0168-583X

VL - 55

SP - 261

EP - 265

JO - Nuclear Inst. and Methods in Physics Research, B

JF - Nuclear Inst. and Methods in Physics Research, B

IS - 1-4

ER -

Limitations of the spreading resistance technique for ion implant profile measurements

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