Investigation on the RESET switching mechanism of bipolar Cu/HfO <inf>2</inf>/Pt RRAM devices with a statistical methodology

Xiaoyi Yang, Shibing Long, Kangwei Zhang, Xiaoyu Liu, Guoming Wang, Xiaojuan Lian, Qi Liu, Hangbing Lv, Ming Wang, Hongwei Xie, Haitao Sun, Pengxiao Sun, Jordi Suñé, Ming Liu

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The RESET switching of bipolar Cu/HfO2/Pt resistance random access memory (RRAM) is investigated. With a statistical methodology, we systematically analyze the RESET voltage (VRESET) and RESET current (IRESET). VRESET shows a U-shape distribution as a function of RON according to the scatter plot of the raw experimental data. After data correction by a series resistance (RS), VRESET is nearly constant, while IRESET decreases linearly with RCF. These behaviours are consistent with the thermal dissolution model of RESET. Moreover, the IRESET and VRESET distributions are strongly affected by the RON distribution. Using a 'resistance screening' method, the IRESET and VRESET distributions are found to be compatible with the Weibull distribution model. The Weibull slopes of the VRESET and IRESET distributions are independent of RCF, indicating that the RESET point corresponds to the initial phase of conductive filament (CF) dissolution, according to our cell-based model for the unipolar RESET of RRAM devices. The scale factor of the VRESET distributions is roughly constant, while that of the IRESET distributions scale with 1/RCF. Accordingly, the RESET switching of the HfO2-based solid electrolyte memory is compatible with the thermal dissolution mechanism, improving our understanding on the physics of resistive switching of RRAM devices. © 2013 IOP Publishing Ltd.
Idioma originalEnglish
Número d’article245107
RevistaJournal Physics D: Applied Physics
Volum46
Número24
DOIs
Estat de la publicacióPublicada - 19 de juny 2013

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