Injected charge to recovery as a parameter to characterize the breakdown reversibility of ultrathin HfSiON gate dielectric

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Resum

The injected charge to recovery QR is presented as a parameter to characterize the dielectric breakdown (BD) reversibility in MOSFETs with an ultrathin high- khafnium-based gate dielectric. The procedure to recover the dielectric is explained, and the dependences of QR on the current limit during BD, the polarity of the BD-recovery stresses, and the number of stress cycles are analyzed. © 2006 IEEE.
Idioma originalEnglish
Número d’article5638618
Pàgines (de-a)126-130
RevistaIEEE Transactions on Device and Materials Reliability
Volum11
DOIs
Estat de la publicacióPublicada - 1 de març 2011

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