Influence of a low field with opposite polarity to the stress on the degradation of 4.5 nm thick SiO<inf>2</inf> films

R. Rodríguez; M. Porti; M. Nafría; X. Aymerich

doi:https://doi.org/10.1016/S0026-2714(01)00059-2

Influence of a low field with opposite polarity to the stress on the degradation of 4.5 nm thick SiO<inf>2</inf> films

R. Rodríguez, M. Porti, M. Nafría, X. Aymerich

Sortida de recerca › Recerca › revisió per companys

Resum

The effects on the oxide degradation of a low field of opposite polarity to that used during the stress have been analysed. Two different methods have been used: the analysis of stress-induced leakage current data and a recently proposed two-step stress method. The last procedure suggests a relaxation of the degradation process. © 2001 Elsevier Science Ltd. All rights reserved.

Idioma original	English
Pàgines (de-a)	1011-1013
Revista	Microelectronics Reliability
Volum	41
DOIs	https://doi.org/10.1016/S0026-2714(01)00059-2
Estat de la publicació	Publicada - 1 de gen. 2001

Accés al document

https://doi.org/10.1016/S0026-2714(01)00059-2

Empremta digital Navegar pels temes de recerca de 'Influence of a low field with opposite polarity to the stress on the degradation of 4.5 nm thick SiO<inf>2</inf> films'. Junts formen una empremta única.

Citeu això

@article{b82e5b8dafdf494c937bf09acb5044b7,

title = "Influence of a low field with opposite polarity to the stress on the degradation of 4.5 nm thick SiO2 films",

abstract = "The effects on the oxide degradation of a low field of opposite polarity to that used during the stress have been analysed. Two different methods have been used: the analysis of stress-induced leakage current data and a recently proposed two-step stress method. The last procedure suggests a relaxation of the degradation process. {\textcopyright} 2001 Elsevier Science Ltd. All rights reserved.",

author = "R. Rodr{\'i}guez and M. Porti and M. Nafr{\'i}a and X. Aymerich",

year = "2001",

month = jan,

day = "1",

doi = "https://doi.org/10.1016/S0026-2714(01)00059-2",

language = "English",

volume = "41",

pages = "1011--1013",

}

TY - JOUR

T1 - Influence of a low field with opposite polarity to the stress on the degradation of 4.5 nm thick SiO2 films

AU - Rodríguez, R.

AU - Porti, M.

AU - Nafría, M.

AU - Aymerich, X.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - The effects on the oxide degradation of a low field of opposite polarity to that used during the stress have been analysed. Two different methods have been used: the analysis of stress-induced leakage current data and a recently proposed two-step stress method. The last procedure suggests a relaxation of the degradation process. © 2001 Elsevier Science Ltd. All rights reserved.

AB - The effects on the oxide degradation of a low field of opposite polarity to that used during the stress have been analysed. Two different methods have been used: the analysis of stress-induced leakage current data and a recently proposed two-step stress method. The last procedure suggests a relaxation of the degradation process. © 2001 Elsevier Science Ltd. All rights reserved.

U2 - https://doi.org/10.1016/S0026-2714(01)00059-2

DO - https://doi.org/10.1016/S0026-2714(01)00059-2

M3 - Article

VL - 41

SP - 1011

EP - 1013

ER -