Resum
The effects on the oxide degradation of a low field of opposite polarity to that used during the stress have been analysed. Two different methods have been used: the analysis of stress-induced leakage current data and a recently proposed two-step stress method. The last procedure suggests a relaxation of the degradation process. © 2001 Elsevier Science Ltd. All rights reserved.
Idioma original | Anglès |
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Pàgines (de-a) | 1011-1013 |
Revista | Microelectronics Reliability |
Volum | 41 |
DOIs | |
Estat de la publicació | Publicada - 1 de gen. 2001 |