Influence of a low field with opposite polarity to the stress on the degradation of 4.5 nm thick SiO<inf>2</inf> films

R. Rodríguez; M. Porti; M. Nafría; X. Aymerich

doi:10.1016/S0026-2714(01)00059-2

Influence of a low field with opposite polarity to the stress on the degradation of 4.5 nm thick SiO<inf>2</inf> films

R. Rodríguez, M. Porti, M. Nafría, X. Aymerich

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The effects on the oxide degradation of a low field of opposite polarity to that used during the stress have been analysed. Two different methods have been used: the analysis of stress-induced leakage current data and a recently proposed two-step stress method. The last procedure suggests a relaxation of the degradation process. © 2001 Elsevier Science Ltd. All rights reserved.

Idioma original	Anglès
Pàgines (de-a)	1011-1013
Revista	Microelectronics Reliability
Volum	41
DOIs	https://doi.org/10.1016/S0026-2714(01)00059-2
Estat de la publicació	Publicada - 1 de gen. 2001

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10.1016/S0026-2714(01)00059-2

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title = "Influence of a low field with opposite polarity to the stress on the degradation of 4.5 nm thick SiO2 films",

abstract = "The effects on the oxide degradation of a low field of opposite polarity to that used during the stress have been analysed. Two different methods have been used: the analysis of stress-induced leakage current data and a recently proposed two-step stress method. The last procedure suggests a relaxation of the degradation process. {\textcopyright} 2001 Elsevier Science Ltd. All rights reserved.",

author = "R. Rodr{\'i}guez and M. Porti and M. Nafr{\'i}a and X. Aymerich",

year = "2001",

month = jan,

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doi = "10.1016/S0026-2714(01)00059-2",

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AU - Rodríguez, R.

AU - Porti, M.

AU - Nafría, M.

AU - Aymerich, X.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - The effects on the oxide degradation of a low field of opposite polarity to that used during the stress have been analysed. Two different methods have been used: the analysis of stress-induced leakage current data and a recently proposed two-step stress method. The last procedure suggests a relaxation of the degradation process. © 2001 Elsevier Science Ltd. All rights reserved.

AB - The effects on the oxide degradation of a low field of opposite polarity to that used during the stress have been analysed. Two different methods have been used: the analysis of stress-induced leakage current data and a recently proposed two-step stress method. The last procedure suggests a relaxation of the degradation process. © 2001 Elsevier Science Ltd. All rights reserved.

U2 - 10.1016/S0026-2714(01)00059-2

DO - 10.1016/S0026-2714(01)00059-2

M3 - Article

SN - 0026-2714

VL - 41

SP - 1011

EP - 1013

JO - Microelectronics Reliability

JF - Microelectronics Reliability

ER -

Influence of a low field with opposite polarity to the stress on the degradation of 4.5 nm thick SiO<inf>2</inf> films

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