In Situ Demonstration of the Link Between Mechanical Strength and Resistive Switching in Resistive Random-Access Memories

Yuanyuan Shi; Yanfeng Ji; Fei Hui; Montserrat Nafria; Marc Porti; Gennadi Bersuker; Mario Lanza

doi:10.1002/aelm.201400058

In Situ Demonstration of the Link Between Mechanical Strength and Resistive Switching in Resistive Random-Access Memories

Yuanyuan Shi, Yanfeng Ji, Fei Hui, Montserrat Nafria, Marc Porti, Gennadi Bersuker, Mario Lanza

Departament d'Enginyeria Electrònica

Producció científica: Contribució a revista › Article › Recerca › Avaluat per experts

13 Cites (Scopus)

Idioma original	Anglès
Número d’article	1400058
Revista	Advanced Electronic Materials
Volum	1
Número	4
DOIs	https://doi.org/10.1002/aelm.201400058
Estat de la publicació	Publicada - 1 de gen. 2015

Accés al document

10.1002/aelm.201400058

Altres arxius i enllaços

https://www.scopus.com/pages/publications/84977123398

Com citar-ho

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title = "In Situ Demonstration of the Link Between Mechanical Strength and Resistive Switching in Resistive Random-Access Memories",

keywords = "conductive atomic force microscope, conductive filament, grain boundaries, mechanical stress, resistive switching",

author = "Yuanyuan Shi and Yanfeng Ji and Fei Hui and Montserrat Nafria and Marc Porti and Gennadi Bersuker and Mario Lanza",

year = "2015",

month = jan,

day = "1",

doi = "10.1002/aelm.201400058",

language = "English",

volume = "1",

journal = "Advanced Electronic Materials",

issn = "2199-160X",

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T1 - In Situ Demonstration of the Link Between Mechanical Strength and Resistive Switching in Resistive Random-Access Memories

AU - Shi, Yuanyuan

AU - Ji, Yanfeng

AU - Hui, Fei

AU - Nafria, Montserrat

AU - Porti, Marc

AU - Bersuker, Gennadi

AU - Lanza, Mario

PY - 2015/1/1

Y1 - 2015/1/1

KW - conductive atomic force microscope

KW - conductive filament

KW - grain boundaries

KW - mechanical stress

KW - resistive switching

UR - https://www.scopus.com/pages/publications/84977123398

U2 - 10.1002/aelm.201400058

DO - 10.1002/aelm.201400058

M3 - Article

SN - 2199-160X

VL - 1

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

IS - 4

M1 - 1400058

ER -