Improved magnetoresistance through spacer thickness optimization in tilted pseudo spin valves based on L1<inf>0</inf> (111)-oriented FePtCu fixed layers

C. L. Zha, Y. Y. Fang, J. Nogús, Johan Åkerman

Producció científica: Contribució a revistaArticleRecercaAvaluat per experts

27 Cites (Scopus)

Resum

Through optimization of the Cu spacer thickness, we demonstrate magnetoresistance (MR) up to 5% in FePtCu/CoFe/Cu/CoFe/NiFe pseudo spin valves based on L10 (111) FePtCu fixed layers with a tilted magnetization. We find an optimum spacer thickness of about 2.4 nm which correlates with a clear onset of strong interlayer exchange coupling below 2.4 nm and spin-independent current shunting in the spacer above 2.4 nm. We argue that yet higher MR should be possible through further reduction in the interlayer exchange coupling. © 2009 American Institute of Physics.
Idioma originalAnglès
Número d’article053909
RevistaJournal of Applied Physics
Volum106
Número5
DOIs
Estat de la publicacióPublicada - 1 de gen. 2009

Fingerprint

Navegar pels temes de recerca de 'Improved magnetoresistance through spacer thickness optimization in tilted pseudo spin valves based on L1<inf>0</inf> (111)-oriented FePtCu fixed layers'. Junts formen un fingerprint únic.

Com citar-ho