Improved behavioral and design model of an Nth-order charge pump

Gaetano Palumbo; Nuria Barniol; Mohcine Bethaoui

doi:10.1109/81.828583

Improved behavioral and design model of an Nth-order charge pump

Gaetano Palumbo, Nuria Barniol, Mohcine Bethaoui

Producció científica: Contribució a revista › Article › Recerca › Avaluat per experts

40 Cites (Scopus)

Resum

An equivalent RC to model the dynamic behavior of a charge pump which takes into account the parasitic capacitances is presented. From the model, simple design equations to allow a pencil and paper design equation are developed. The model proposed was validated by means of Spice simulation and typically shows errors lower than 15%.

Idioma original	Anglès
Pàgines (de-a)	264-268
Revista	IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications
Volum	47
Número	2
DOIs	https://doi.org/10.1109/81.828583
Estat de la publicació	Publicada - 1 de gen. 2000

Accés al document

10.1109/81.828583

Com citar-ho

@article{0d54f12a83ba41319e5a0cd1e7b8da4a,

title = "Improved behavioral and design model of an Nth-order charge pump",

abstract = "An equivalent RC to model the dynamic behavior of a charge pump which takes into account the parasitic capacitances is presented. From the model, simple design equations to allow a pencil and paper design equation are developed. The model proposed was validated by means of Spice simulation and typically shows errors lower than 15%.",

author = "Gaetano Palumbo and Nuria Barniol and Mohcine Bethaoui",

year = "2000",

month = jan,

day = "1",

doi = "10.1109/81.828583",

language = "English",

volume = "47",

pages = "264--268",

journal = "IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications",

issn = "1057-7122",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - Improved behavioral and design model of an Nth-order charge pump

AU - Palumbo, Gaetano

AU - Barniol, Nuria

AU - Bethaoui, Mohcine

PY - 2000/1/1

Y1 - 2000/1/1

N2 - An equivalent RC to model the dynamic behavior of a charge pump which takes into account the parasitic capacitances is presented. From the model, simple design equations to allow a pencil and paper design equation are developed. The model proposed was validated by means of Spice simulation and typically shows errors lower than 15%.

AB - An equivalent RC to model the dynamic behavior of a charge pump which takes into account the parasitic capacitances is presented. From the model, simple design equations to allow a pencil and paper design equation are developed. The model proposed was validated by means of Spice simulation and typically shows errors lower than 15%.

U2 - 10.1109/81.828583

DO - 10.1109/81.828583

M3 - Article

SN - 1057-7122

VL - 47

SP - 264

EP - 268

JO - IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications

JF - IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications

IS - 2

ER -

Improved behavioral and design model of an Nth-order charge pump

Resum

Accés al document

Fingerprint

Com citar-ho