High-sensitivity capacitive sensing interfacing circuit for monolithic CMOS M/NEMS resonators

J. Verd, A. Uranga, G. Abadal, J. Teva, F. Pérez-Murano, N. Barniol

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Resum

A simple and high-sensitivity 0.35m CMOS readout circuit for resonant M/NEMS with capacitive sensing is presented. The proposed readout scheme presents an equivalent transimpedance gain of 140dBΩ (at 1MHz) and an input referred noise of 29nV/Hz1/2. Detection of submicrometre-scale cantilever vibrations in the MHz range is demonstrated with a displacement resolution of 33fm/Hz1/2. © The Institution of Engineering and Technology 2007.
Idioma originalEnglish
Pàgines (de-a)1274-1276
RevistaElectronics Letters
Volum43
DOIs
Estat de la publicacióPublicada - 19 de nov. 2007

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