High ferroelectric polarization in c -oriented BaTiO <inf>3</inf> epitaxial thin films on SrTiO <inf>3</inf> /Si(001)

M. Scigaj; C. H. Chao; J. Gázquez; I. Fina; R. Moalla; G. Saint-Girons; M. F. Chisholm; G. Herranz; J. Fontcuberta; R. Bachelet; F. Sánchez

doi:10.1063/1.4962836

High ferroelectric polarization in c -oriented BaTiO <inf>3</inf> epitaxial thin films on SrTiO <inf>3</inf> /Si(001)

M. Scigaj, C. H. Chao, J. Gázquez, I. Fina, R. Moalla, G. Saint-Girons, M. F. Chisholm, G. Herranz, J. Fontcuberta, R. Bachelet, F. Sánchez

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© 2016 Author(s). The integration of epitaxial BaTiO 3 films on silicon, combining c-orientation, surface flatness, and high ferroelectric polarization is of main interest towards its use in memory devices. This combination of properties has been only achieved so far by using yttria-stabilized zirconia buffer layers. Here, the all-perovskite BaTiO 3 /LaNiO 3 /SrTiO 3 heterostructure is grown monolithically on Si(001). The BaTiO 3 films are epitaxial and c-oriented and present low surface roughness and high remnant ferroelectric polarization around 6 μC/cm 2 . This result paves the way towards the fabrication of lead-free BaTiO 3 ferroelectric memories on silicon platforms.

Idioma original	Anglès
Número d’article	122903
Revista	Applied Physics Letters
Volum	109
Número	12
DOIs	https://doi.org/10.1063/1.4962836
Estat de la publicació	Publicada - 19 de set. 2016

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10.1063/1.4962836

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title = "High ferroelectric polarization in c -oriented BaTiO 3 epitaxial thin films on SrTiO 3 /Si(001)",

abstract = "{\textcopyright} 2016 Author(s). The integration of epitaxial BaTiO 3 films on silicon, combining c-orientation, surface flatness, and high ferroelectric polarization is of main interest towards its use in memory devices. This combination of properties has been only achieved so far by using yttria-stabilized zirconia buffer layers. Here, the all-perovskite BaTiO 3 /LaNiO 3 /SrTiO 3 heterostructure is grown monolithically on Si(001). The BaTiO 3 films are epitaxial and c-oriented and present low surface roughness and high remnant ferroelectric polarization around 6 μC/cm 2 . This result paves the way towards the fabrication of lead-free BaTiO 3 ferroelectric memories on silicon platforms.",

author = "M. Scigaj and Chao, {C. H.} and J. G{\'a}zquez and I. Fina and R. Moalla and G. Saint-Girons and Chisholm, {M. F.} and G. Herranz and J. Fontcuberta and R. Bachelet and F. S{\'a}nchez",

year = "2016",

month = sep,

day = "19",

doi = "10.1063/1.4962836",

language = "English",

volume = "109",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "12",

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TY - JOUR

T1 - High ferroelectric polarization in c -oriented BaTiO 3 epitaxial thin films on SrTiO 3 /Si(001)

AU - Scigaj, M.

AU - Chao, C. H.

AU - Gázquez, J.

AU - Fina, I.

AU - Moalla, R.

AU - Saint-Girons, G.

AU - Chisholm, M. F.

AU - Herranz, G.

AU - Fontcuberta, J.

AU - Bachelet, R.

AU - Sánchez, F.

PY - 2016/9/19

Y1 - 2016/9/19

N2 - © 2016 Author(s). The integration of epitaxial BaTiO 3 films on silicon, combining c-orientation, surface flatness, and high ferroelectric polarization is of main interest towards its use in memory devices. This combination of properties has been only achieved so far by using yttria-stabilized zirconia buffer layers. Here, the all-perovskite BaTiO 3 /LaNiO 3 /SrTiO 3 heterostructure is grown monolithically on Si(001). The BaTiO 3 films are epitaxial and c-oriented and present low surface roughness and high remnant ferroelectric polarization around 6 μC/cm 2 . This result paves the way towards the fabrication of lead-free BaTiO 3 ferroelectric memories on silicon platforms.

AB - © 2016 Author(s). The integration of epitaxial BaTiO 3 films on silicon, combining c-orientation, surface flatness, and high ferroelectric polarization is of main interest towards its use in memory devices. This combination of properties has been only achieved so far by using yttria-stabilized zirconia buffer layers. Here, the all-perovskite BaTiO 3 /LaNiO 3 /SrTiO 3 heterostructure is grown monolithically on Si(001). The BaTiO 3 films are epitaxial and c-oriented and present low surface roughness and high remnant ferroelectric polarization around 6 μC/cm 2 . This result paves the way towards the fabrication of lead-free BaTiO 3 ferroelectric memories on silicon platforms.

U2 - 10.1063/1.4962836

DO - 10.1063/1.4962836

M3 - Article

SN - 0003-6951

VL - 109

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 122903

ER -

High ferroelectric polarization in c -oriented BaTiO <inf>3</inf> epitaxial thin films on SrTiO <inf>3</inf> /Si(001)

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