Heat transport in bulk/nanoporous/bulk silicon devices

M. Criado-Sancho; D. Jou

doi:10.1016/j.physleta.2012.12.015

Heat transport in bulk/nanoporous/bulk silicon devices

M. Criado-Sancho, D. Jou

Departament de Física

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Resum

We study heat transport in bulk/nanoporous/bulk silicon devices; we show that, despite bulk/nanoporous devices may act as thermal rectifiers, the non-linear aspects of their joint thermal conductance are not strong enough to lead to a negative differential thermal resistance, necessary to allow bulk/nanoporous/bulk Si devices to act as thermal transistors. Furthermore, we explicitly study the effective thermal conductivity of the mentioned devices for several temperatures, geometries, porosities, and pore size. © 2012 Elsevier B.V.

Idioma original	Anglès
Pàgines (de-a)	486-490
Revista	Physics Letters, Section A: General, Atomic and Solid State Physics
Volum	377
DOIs	https://doi.org/10.1016/j.physleta.2012.12.015
Estat de la publicació	Publicada - 4 de febr. 2013

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10.1016/j.physleta.2012.12.015

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https://www.scopus.com/pages/publications/84872413788

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title = "Heat transport in bulk/nanoporous/bulk silicon devices",

abstract = "We study heat transport in bulk/nanoporous/bulk silicon devices; we show that, despite bulk/nanoporous devices may act as thermal rectifiers, the non-linear aspects of their joint thermal conductance are not strong enough to lead to a negative differential thermal resistance, necessary to allow bulk/nanoporous/bulk Si devices to act as thermal transistors. Furthermore, we explicitly study the effective thermal conductivity of the mentioned devices for several temperatures, geometries, porosities, and pore size. {\textcopyright} 2012 Elsevier B.V.",

keywords = "Heat rectification, Phonon hydrodynamics, Phononics, Porous Si",

author = "M. Criado-Sancho and D. Jou",

year = "2013",

month = feb,

day = "4",

doi = "10.1016/j.physleta.2012.12.015",

language = "English",

volume = "377",

pages = "486--490",

}

TY - JOUR

T1 - Heat transport in bulk/nanoporous/bulk silicon devices

AU - Criado-Sancho, M.

AU - Jou, D.

PY - 2013/2/4

Y1 - 2013/2/4

N2 - We study heat transport in bulk/nanoporous/bulk silicon devices; we show that, despite bulk/nanoporous devices may act as thermal rectifiers, the non-linear aspects of their joint thermal conductance are not strong enough to lead to a negative differential thermal resistance, necessary to allow bulk/nanoporous/bulk Si devices to act as thermal transistors. Furthermore, we explicitly study the effective thermal conductivity of the mentioned devices for several temperatures, geometries, porosities, and pore size. © 2012 Elsevier B.V.

AB - We study heat transport in bulk/nanoporous/bulk silicon devices; we show that, despite bulk/nanoporous devices may act as thermal rectifiers, the non-linear aspects of their joint thermal conductance are not strong enough to lead to a negative differential thermal resistance, necessary to allow bulk/nanoporous/bulk Si devices to act as thermal transistors. Furthermore, we explicitly study the effective thermal conductivity of the mentioned devices for several temperatures, geometries, porosities, and pore size. © 2012 Elsevier B.V.

KW - Heat rectification

KW - Phonon hydrodynamics

KW - Phononics

KW - Porous Si

UR - https://www.scopus.com/pages/publications/84872413788

U2 - 10.1016/j.physleta.2012.12.015

DO - 10.1016/j.physleta.2012.12.015

M3 - Article

SN - 0375-9601

VL - 377

SP - 486

EP - 490

JO - Physics Letters, Section A: General, Atomic and Solid State Physics

JF - Physics Letters, Section A: General, Atomic and Solid State Physics

ER -

Heat transport in bulk/nanoporous/bulk silicon devices

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