TY - JOUR
T1 - Heat transport in bulk/nanoporous/bulk silicon devices
AU - Criado-Sancho, M.
AU - Jou, D.
PY - 2013/2/4
Y1 - 2013/2/4
N2 - We study heat transport in bulk/nanoporous/bulk silicon devices; we show that, despite bulk/nanoporous devices may act as thermal rectifiers, the non-linear aspects of their joint thermal conductance are not strong enough to lead to a negative differential thermal resistance, necessary to allow bulk/nanoporous/bulk Si devices to act as thermal transistors. Furthermore, we explicitly study the effective thermal conductivity of the mentioned devices for several temperatures, geometries, porosities, and pore size. © 2012 Elsevier B.V.
AB - We study heat transport in bulk/nanoporous/bulk silicon devices; we show that, despite bulk/nanoporous devices may act as thermal rectifiers, the non-linear aspects of their joint thermal conductance are not strong enough to lead to a negative differential thermal resistance, necessary to allow bulk/nanoporous/bulk Si devices to act as thermal transistors. Furthermore, we explicitly study the effective thermal conductivity of the mentioned devices for several temperatures, geometries, porosities, and pore size. © 2012 Elsevier B.V.
KW - Heat rectification
KW - Phonon hydrodynamics
KW - Phononics
KW - Porous Si
U2 - 10.1016/j.physleta.2012.12.015
DO - 10.1016/j.physleta.2012.12.015
M3 - Article
SN - 0375-9601
VL - 377
SP - 486
EP - 490
JO - Physics Letters, Section A: General, Atomic and Solid State Physics
JF - Physics Letters, Section A: General, Atomic and Solid State Physics
ER -