Growth of Si nuclei on SiO<inf>2</inf> for quantum dot memory applications

J. Vizoso, F. Martín, X. Martínez, M. Garriga, X. Aymerich

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    Resum

    By means of a Rapid Thermal Chemical Vapor Deposition (RTCVD) reactor, we have deposited Si nuclei on SiO2 with appropriate characteristics for the fabrication of quantum dot based memories. These characteristics have been obtained from AFM measurements. The effects of temperature and deposition time on nuclei density, size and uniformity have been analyzed and discussed.
    Idioma originalAnglès
    Pàgines (de-a)431-434
    RevistaMicroelectronic Engineering
    Volum48
    DOIs
    Estat de la publicacióPublicada - 1 de gen. 1999

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