TY - JOUR
T1 - Growth of Si nuclei on SiO2 for quantum dot memory applications
AU - Vizoso, J.
AU - Martín, F.
AU - Martínez, X.
AU - Garriga, M.
AU - Aymerich, X.
PY - 1999/1/1
Y1 - 1999/1/1
N2 - By means of a Rapid Thermal Chemical Vapor Deposition (RTCVD) reactor, we have deposited Si nuclei on SiO2 with appropriate characteristics for the fabrication of quantum dot based memories. These characteristics have been obtained from AFM measurements. The effects of temperature and deposition time on nuclei density, size and uniformity have been analyzed and discussed.
AB - By means of a Rapid Thermal Chemical Vapor Deposition (RTCVD) reactor, we have deposited Si nuclei on SiO2 with appropriate characteristics for the fabrication of quantum dot based memories. These characteristics have been obtained from AFM measurements. The effects of temperature and deposition time on nuclei density, size and uniformity have been analyzed and discussed.
U2 - 10.1016/S0167-9317(99)00420-7
DO - 10.1016/S0167-9317(99)00420-7
M3 - Article
SN - 0167-9317
VL - 48
SP - 431
EP - 434
JO - Microelectronic Engineering
JF - Microelectronic Engineering
ER -