Growth of nanoscale Si nuclei on SiO<inf>2</inf> by rapid thermal chemical vapor deposition

J. Vizoso, F. Martín, X. Martínez, M. Garriga, X. Aymerich

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    Resum

    In this work, the growth of nanoscale Si nuclei on SiO2 by means of a rapid thermal chemical vapor deposition reactor is demonstrated. This has applications as an alternative to traditional lithographic methods to patterning of surfaces at the nanometer-length scale. We have obtained appropriate process conditions to grow Si islands on SiO2 from the analysis of the growth rate, incubation time, and morphology of very thin Si films. Atomic force microscopy characterization of runs carried out under these conditions reveals that the properties of the resulting nuclei fit the requirements for the fabrication of quantum dot based devices.
    Idioma originalAnglès
    Pàgines (de-a)4219-4225
    RevistaJournal of the Electrochemical Society
    Volum146
    DOIs
    Estat de la publicacióPublicada - 1 de nov. 1999

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