Keyphrases
Low Pressure Chemical Vapor Deposition (LPCVD)
100%
SiC Film
100%
Growth Characterization
100%
(001) Substrate
100%
Si(111)
100%
Stress Characterization
100%
Si Substrate
66%
3C-SiC
66%
Wafer
33%
Reactor
33%
Silica
33%
High Aspect Ratio
33%
Single-crystalline
33%
Out-diffusion
33%
Gas Flow
33%
Deposition Experiment
33%
Tetramethylsilane
33%
Time Flow
33%
Interface Formation
33%
Hillock Formation
33%
Engineering
Deposited Film
100%
Oxidized Si
100%
Low Pressure Chemical Vapor Deposition
100%
Si Substrate
66%
Temperature Time
33%
Gas Flow
33%
High Aspect Ratio
33%
Silicon Dioxide
33%
Earth and Planetary Sciences
Gas Flow
100%
Nucleation
100%
Molecular Beam Epitaxy
100%
Material Science
Film
100%
Low Pressure Chemical Vapor Deposition
100%
Nucleation
33%
Molecular Beam Epitaxy
33%
Gas Flow
33%