TY - JOUR
T1 - Growth and stress characterization of LPCVD SiC films deposited on bare, carbonized and oxidized Si(001) substrates
AU - Hurtós, E.
AU - Rodríguez-Viejo, J.
AU - Zekentes, K.
AU - Clavaguera-Mora, M. T.
PY - 1999/1/1
Y1 - 1999/1/1
N2 - A simple LPCVD reactor has been used to deposit 3C-SiC on oxidized, bare and MBE carbonized Si (001) wafers. The deposition experiments were conducted at different temperatures, times and gas flows pyrolizing tetramethylsilane (TMS). Voids at the interface and hillock formation were observed preferentially on the bare Si substrates due to Si out-diffusion. The best LPCVD films were obtained at temperatures around 1170°C on smooth single-crystalline carbonized substrates. The nucleation and growth of 3C-SiC on SiO2/Si substrates proceeds at a slower rate with the formation of 3D island with a high aspect ratio.
AB - A simple LPCVD reactor has been used to deposit 3C-SiC on oxidized, bare and MBE carbonized Si (001) wafers. The deposition experiments were conducted at different temperatures, times and gas flows pyrolizing tetramethylsilane (TMS). Voids at the interface and hillock formation were observed preferentially on the bare Si substrates due to Si out-diffusion. The best LPCVD films were obtained at temperatures around 1170°C on smooth single-crystalline carbonized substrates. The nucleation and growth of 3C-SiC on SiO2/Si substrates proceeds at a slower rate with the formation of 3D island with a high aspect ratio.
UR - https://www.scopus.com/pages/publications/0032591081
M3 - Article
SN - 0272-9172
VL - 555
SP - 173
EP - 178
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
ER -