Grain boundary driven leakage path formation in HfO2 dielectrics

G. Bersuker; J. Yuma; L. Vandelli; A. Padovani; L. Larcher; V. Iglesias; M. Porti; M. Nafria; K. P. McKenna; A. Shluger; P. Kirsch; R. Jammy

Grain boundary driven leakage path formation in HfO2 dielectrics

G. Bersuker, J. Yuma, L. Vandelli, A. Padovani, L. Larcher, V. Iglesias, M. Porti, M. Nafria, K. P. McKenna, A. Shluger, P. Kirsch, R. Jammy

Departament d'Enginyeria Electrònica

Producció científica: Contribució a revista › Article › Recerca › Avaluat per experts

125 Cites (Scopus)

Idioma original	Anglès
Pàgines (de-a)	146-150
Revista	Solid-State Electronics
Volum	66
Estat de la publicació	Publicada - 1 de gen. 2011

Altres arxius i enllaços

https://www.scopus.com/pages/publications/80054032521

Com citar-ho

@article{cfd3e054056d4fe18af05517d5436d1c,

title = "Grain boundary driven leakage path formation in HfO2 dielectrics",

author = "G. Bersuker and J. Yuma and L. Vandelli and A. Padovani and L. Larcher and V. Iglesias and M. Porti and M. Nafria and McKenna, \{K. P.\} and A. Shluger and P. Kirsch and R. Jammy",

year = "2011",

month = jan,

day = "1",

language = "English",

volume = "66",

pages = "146--150",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

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T1 - Grain boundary driven leakage path formation in HfO2 dielectrics

AU - Bersuker, G.

AU - Yuma, J.

AU - Vandelli, L.

AU - Padovani, A.

AU - Larcher, L.

AU - Iglesias, V.

AU - Porti, M.

AU - Nafria, M.

AU - McKenna, K. P.

AU - Shluger, A.

AU - Kirsch, P.

AU - Jammy, R.

PY - 2011/1/1

Y1 - 2011/1/1

UR - https://www.scopus.com/pages/publications/80054032521

M3 - Article

SN - 0038-1101

VL - 66

SP - 146

EP - 150

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -