Grain boundaries as preferential sites for resistive switching in the HfO <inf>2</inf> resistive random access memory structures

M. Lanza, K. Zhang, M. Porti, M. Nafria, Z. Y. Shen, L. F. Liu, J. F. Kang, D. Gilmer, G. Bersuker

Producció científica: Contribució a revista › Article › Recerca › Avaluat per experts

187 Cites (Scopus)

Fingerprint

Navegar pels temes de recerca de 'Grain boundaries as preferential sites for resistive switching in the HfO <inf>2</inf> resistive random access memory structures'. Junts formen un fingerprint únic.

Keyphrases

Material Science

Physics